Abstract: A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm?3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material, beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5 × 1017 cm-3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Abstract: A semiconductor structure comprises a layer of a first III-nitride material having a first lattice dimension; a non-porous layer of a second III-nitride material having a second lattice dimension different from the first lattice dimension; and a porous region of III-nitride material disposed between the layer of first III-nitride material and the non-porous layer of the second III-nitride material. An optoelectronic semiconductor device, an LED, and a method of manufacturing a semiconductor structure are also provided.

Abstract: A semiconductor structure comprising a matrix having a first cubic Group-III nitride with a first band gap, and a second cubic Group-III nitride having a second band gap and forming a region embedded within the matrix. The second cubic Group-III nitride comprises an alloying material which reduces the second band gap relative to the first band gap, a quantum wire is defined by a portion within the region embedded within the matrix, the portion forming a one-dimensional charge-carrier confinement channel, wherein the quantum wire is operable to exhibit emission luminescence which is optically polarised.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Abstract: A hands-free music notation display system for playing digital sheet music. The system includes a tablet that displays digital sheet music and houses the system's operating components therein. The housing within the tablet includes a communication link connecting the tablet to one or more foot controls. The foot controls provide the ability for a user to display the next or previous page on the tablet with his or her foot, thereby permitting the user to remain hands-free to play an instrument. The tablet includes a plurality of buttons that permit a user to load and play sheet music thereon.

Abstract: A hands-free music notation display system for playing digital sheet music. The system includes a tablet that displays digital sheet music and houses the system's operating components therein. The housing within the tablet includes a communication link connecting the tablet to one or more foot controls. The foot controls provide the ability for a user to display the next or previous page on the tablet with his or her foot, thereby permitting the user to remain hands-free to play an instrument. The tablet includes a plurality of buttons that permit a user to load and play sheet music thereon.