Abstract: A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first, second and third fixed magnetic layer structures are arranged one over the other, have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane, wherein the respective magnetization orientations of the first fixed magnetic layer structure and the second fixed magnetic layer structure are oriented in opposite directions, and wherein the magnetization orientation of the first fixed magnetic layer structure is configured to oscillate in a first direction in response to a current or a voltage applied across the magnetic junction so as to change the magnetization orientation of the free magnetic layer structure.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a fixed magnetic layer structure having a fixed magnetization orientation along a first easy axis, a free magnetic layer structure having a variable magnetization orientation along a second easy axis, and an offsetting magnetic layer structure having a magnetization orientation along an axis at least substantially non-parallel to at least one of the first easy axis or the second easy axis, wherein the fixed magnetic layer structure, the free magnetic layer structure and the offsetting magnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.

Abstract: A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first second and free magnetic layer structures are arranged one over the other. The first second and free magnetic layer structures have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the free magnetic layer structure and either one of the first fixed magnetic layer structure or the second fixed magnetic layer structure. The respective magnetization orientations of the first and the second fixed magnetic layer structures are oriented anti-parallel to each other, and the first fixed magnetic layer structure is a static fixed magnetic layer structure having a switching field that is larger than a switching field of the free magnetic layer structure.

Abstract: According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes a fixed magnetic layer structure having a fixed magnetization orientation along a first easy axis, a free magnetic layer structure having a variable magnetization orientation along a second easy axis, and an offsetting magnetic layer structure having a magnetization orientation along an axis at least substantially non-parallel to at least one of the first easy axis or the second easy axis, wherein the fixed magnetic layer structure, the free magnetic layer structure and the offsetting magnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method of forming a magnetoresistive device is also provided.

Abstract: According to embodiments of the present invention, a magnetoresistive device having a magnetic junction is provided. The magnetic junction includes at least one fixed magnetic layer structure having a fixed magnetization orientation; and at least two free magnetic layer structures, each of the at least two free magnetic layer structures having a variable magnetization orientation; wherein the at least one fixed magnetic layer structure overlaps with the at least two free magnetic layer structures such that a current flow is possible through the magnetic junction; and wherein the at least one fixed magnetic layer structure and the at least two free magnetic layer structures are respectively configured such that the fixed magnetization orientation and the variable magnetization orientation are oriented in a direction substantially perpendicular to a plane defined by an interface between the at least one fixed magnetic layer structure and either one of the at least two free magnetic layer structures.

Abstract: A magnetoresistance device is provided. The magnetoresistance device includes a hard magnetic layer, and a soft magnetic layer having a multi-layer stack structure. The multi-layer stack structure has a first layer of a first material and a second layer of a second material. The first material includes cobalt iron boron and the second material includes palladium or platinum.

Abstract: A magnetoresistive device having a magnetic junction including a first fixed magnetic layer structure, a second fixed magnetic layer structure, and a free magnetic layer structure, wherein the first second and free magnetic layer structures are arranged one over the other. The first second and free magnetic layer structures have respective magnetization orientations configured to orient in a direction at least substantially perpendicular to a plane defined by an interface between the free magnetic layer structure and either one of the first fixed magnetic layer structure or the second fixed magnetic layer structure. The respective magnetization orientations of the first and the second fixed magnetic layer structures are oriented anti-parallel to each other, and the first fixed magnetic layer structure is a static fixed magnetic layer structure having a switching field that is larger than a switching field of the free magnetic layer structure.

Abstract: A magnetoresistive device having a magnetic junction is provided.

Abstract: A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer layer is sputtered thereon. A main ion beam generates ions onto a composite surface including magnetic chips and insulator material. Simultaneously, an assisted ion beam provides ions directly to the substrate, thus improving the softness of the free layer and smoothness of the spacer layer. Neutralizers are also provided to prevent ion repulsion and improve ion beam focus. As a result, a thin film spacer can be formed, and the nano-constricted MR spin valve having low free layer coercivity and low interlayer coupling between the free layer and pinned layer is formed.

Abstract: A magnetoresistance effect element comprises a free layer composed of a ferromagnetic layer, a pinned layer composed of a ferromagnetic layer, and a layer disposed between the free layer and the pinned layer and including at least one nano-contact portion disposed at least one portion between the free layer and the pinned layer. The nano-contact portion has a dimension, including at least one of a length in the layer lamination direction and a length in a direction normal to the layer lamination direction, being not more than Fermi length. The nano-contact portion is provided, in an inside portion thereof, with a magnetic wall composed of either one of Bloch magnetic wall, Nëel magnetic wall or a combination wall thereof.

Abstract: A reader of a current-perpendicular-to-plane magnetoresistive head includes a spin valve with sensor having a stabilizer adjacent thereto, to substantially avoid magnetization distribution at the edge of the sensor due to vortex effect. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided. The stabilizer includes a pinned ferromagnetic layer adjacent to the free layer, and an antiferromagnetic layer positioned thereon. It becomes easy to provide an effective biasing using a variety of materials having different magnetic moments and thickness. Also problems related to sensor edge for small size will be overcome. A method of manufacturing the reader is also provided.

Abstract: A magnetoresistive element is provided as a spin valve having a synthetic free layer. More specifically, the synthetic free layer includes a low perpendicular anisotropy layer that is separated from a high perpendicular anisotropy layer by a spacer. Thus, the high anisotropy material introduces an out-of-plane component by exchange coupling. The high perpendicular anisotropy material also has low spin polarization. Further, the low anisotropy material positioned closer to the pinned layer has a high spin polarization. As a result, the magnetization of the low anisotropy material is re-oriented from an in-plane direction to an out-of-plane direction. Accordingly, the overall free layer perpendicular anisotropy can be made small as a result of the low anisotropy material and the high anisotropy material. Adjusting the thickness of these layers, as well as the spacer therebetween, can further lower the anisotropy and thus further increase the sensitivity.

Abstract: A magnetoresistive read head includes a spin valve having a multi-layer in-stack bias and side shields to substantially reduce the undesired flux from adjacent bits and tracks, as well as from the transverse field of the recording medium itself. At least one free layer is spaced apart from at least one pinned layer by a spacer. Above the free layer, a capping layer is provided, followed by the in-stack bias, which includes a non-magnetic conductive layer, a ferromagnetic layer having a magnetization fixed by an anti-ferromagnetic layer, and a stabilizing ferromagnetic layer. Additionally, a multilayered side shield is provided, including a thin insulator, a soft buffer layer and a soft side shield layer. As a result, the free layer is shielded from the undesired flux, and recording media having substantially smaller track size and bit size.

Abstract: A magnetic recording medium and a method of making a magnetic recording medium are disclosed. The magnetic recording medium comprises an Iridium-Manganese based intermediate layer formed over a base structure and a magnetic recording layer formed over the Iridium-Manganese based intermediate layer.

Abstract: An in-stack bias is provided for stabilizing the free layer of a ballistic magneto resistive (BMR) sensor. In-stack bias includes a decoupling layer that is a spacer between the free layer and a ferromagnetic stabilizer layer of the in-stack bias, and an anti-ferromagnetic layer positioned above the ferromagnetic layer. The spacer is a nano-contact layer having magnetic particles positioned in a non-magnetic matrix. The free layer may be single layer, composed or synthetic, and the in-stack bias may be laterally bounded by the sidewalls, or alternatively, extend above the sidewalls and spacer. Additionally, a hard bias may also be provided. The spacer of the in-stack bias results in the reduction of the exchange coupling between the free layer and ferromagnetic stabilizing layer, an improved A?R due to confinement of current flow through a smaller area, and increased MR due to the domain wall created within the magnetic nano-contact.

Abstract: A magnetoresistance effect element includes a free layer as a first ferromagnetic layer, a pinned layer as a second ferromagnetic layer, and at least one nano-junction provided between the free layer and the pinned layer. The nano-junction contains at least one non-metal selected from the group consisting of oxygen, nitrogen, sulfur and chlorine. Preferably, the material for forming the nano-junction is a ferromagnetic metal selected from the group consisting of Fe, Ni, Co, NiFe, CoFe and CoFeNi or a halfmetal selected from the group consisting of NiFeSb, NiMnSb, PtMnSb and MnSb.

Abstract: A magnetoresistance effect element is composed of a first ferromagnetic layer, a second ferromagnetic layer, and at least one nano-contact portion formed between the first and second ferromagnetic layers, which are formed on the same plane on a substrate. The nano-contact portion has a maximum dimension of not more than Fermi length of a material constituting the nano-contact portion. A permanent magnet layer or in-stack bias layer may be further formed on the first and/or second ferromagnetic layer.

Abstract: A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The free layer includes a cobalt compound as a thin film including at least one of Co—X, CoFe—X and CoNi—X, where X is an element from the lanthanoid family (a 4-f element). The content of Co is higher than 80 percent, and the content of the lanthanoid element is less than 10 percent. The film may comprise the entire free layer, or be positioned adjacent to one or more conventional free layer films. The pinned layer is a conventional single layer, or a synthetic multi-layered structure having a spacer between sub-layers. Because the spin valve structure has a high exchange stiffness and damping factor, spin transfer effect is reduced and a high-speed dynamic response is provided.