Abstract: The present invention relates to a photocatalyst nanomaterial comprising a solid substrate and a metal oxide/oxyhydroxide arranged on the solid substrate forming a coating having a thickness comprised between 1 nm and 1 micrometer and having an amorphous structure. The invention also relates to a nanometric coating which comprises the described photocatalyst material and metallic nanoparticles, as well as to the method for obtaining the catalyst material, to the use of the catalyst material as a photocatalyst in the ultrafast synthesis of metallic nanoparticles, and to the use of the nanometric coating in the manufacture of optical sensors, biocidal coatings and elimination of reactive oxygen species.

Abstract: The present invention relates to an enhanced catalytic nickel oxide sheet having an organic part which includes non-stoichiometric nickel oxides dispersed in an organic matrix, wherein the catalytic sheet is supported on a substrate. The invention also relates to a method for obtaining the catalytic film and to its uses as an electrode in electrocatalysis of water or in photocatalysis.

Abstract: A composition is specified which forms an electrically conductive resist layer and comprises a resin that can be crosslinked to form a base polymer, an organic compound that can be crosslinked to form an electrically conductive substance, a crosslinking agent having an oxidative or reductive action, and at least one solvent. An electrically conductive resist layer of this type may be used for example for dissipating electrical charges when patterning a photoresist by means of electrically charged particles.

Abstract: A composition is specified which forms an electrically conductive resist layer and comprises a resin that can be crosslinked to form a base polymer, an organic compound that can be crosslinked to form an electrically conductive substance, a crosslinking agent having an oxidative or reductive action, and at least one solvent. An electrically conductive resist layer of this type may be used for example for dissipating electrical charges when patterning a photoresist by means of electrically charged particles.

Abstract: A polymerizable composition for use in electron beam lithography, according to the following structural formula: The formula use the following definitions. m is a number from 0.1 to 0.9. n is a number from 0.1 to 0.9 with m+n=1. I is an integer from 1 to 100. R1 is H, an alkyl, a halogen, an amine, a silicon compound, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R2 is H, an alkyl, a halogen, an amine, a silicon group, or a germanium compound, having a chain length of up to six carbon, silicon, or germanium atoms. R3 is an organic protective group which can be eliminated. A resist and a process using the resist utilize the polymerizable composition. The use of the polymerizable composition in a resist reduces or prevents charging of a substrate at high exposure sensitivity.

Abstract: A polymerizable composition for use in electron beam lithography, according to the following structural formula: 1