Patents by Inventor Rafael Ben-Michael
Rafael Ben-Michael has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7964435Abstract: A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.Type: GrantFiled: March 7, 2007Date of Patent: June 21, 2011Assignee: Princeton Lightware, Inc.Inventors: Rafael Ben-Michael, Mark Allen Itzler, Xudong Jiang
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Patent number: 7902570Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.Type: GrantFiled: October 9, 2009Date of Patent: March 8, 2011Assignee: Princeton Lightwave, Inc.Inventors: Mark Allen Itzler, Rafael Ben-Michael, Sabbir Sajjad Rangwala
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Patent number: 7808015Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.Type: GrantFiled: March 19, 2008Date of Patent: October 5, 2010Assignee: Princeton Lightwave, Inc.Inventors: Mark Allen Itzler, Rafael Ben-Michael
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Publication number: 20100025798Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.Type: ApplicationFiled: October 9, 2009Publication date: February 4, 2010Applicant: PRINCETON LIGHTWAVE, INC.Inventors: Mark Allen Itzler, Rafael Ben-Michael, Sabbir Sajjad Rangwala
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Patent number: 7626193Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.Type: GrantFiled: March 27, 2006Date of Patent: December 1, 2009Assignee: Princeton Lightwave, Inc.Inventors: Mark Allen Itzler, Rafael Ben-Michael, Sabbir Sajjad Rangwala
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Patent number: 7582920Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.Type: GrantFiled: March 19, 2008Date of Patent: September 1, 2009Assignee: Princeton Lightwave, Inc.Inventors: Mark Allen Itzler, Rafael Ben-Michael
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Patent number: 7553734Abstract: Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a low dark count rate. Some APDs fabricated using these methods have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is substantially minimized and further wherein the device region maintains a substantially uniform gain and breakdown voltage.Type: GrantFiled: October 17, 2005Date of Patent: June 30, 2009Assignee: Princeton Lightwave, Inc.Inventors: Rafael Ben-Michael, Mark Allen Itzler
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Publication number: 20080220598Abstract: A method for controlling dopant diffusion is disclosed. Using certain control parameters that are not used in the prior art, the method provides an unprecedented measure of control over the dopant diffusion process. The control parameters include, among others, the size of the diffusion windows in the diffusion mask and the proximity of the diffusion windows to a dopant sink. In some embodiments, the diffusion process is conducted in an epi-reactor.Type: ApplicationFiled: March 7, 2007Publication date: September 11, 2008Applicant: PRINCETON LIGHTWAVE, INC.Inventors: Rafael Ben-Michael, Mark Allen Itzler, Xudong Jiang
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Publication number: 20080164555Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.Type: ApplicationFiled: March 19, 2008Publication date: July 10, 2008Applicant: PRINCETON LIGHTWAVE, INC.Inventors: Mark Allen Itzler, Rafael Ben-Michael
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Publication number: 20080164554Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.Type: ApplicationFiled: March 19, 2008Publication date: July 10, 2008Applicant: PRINCETON LIGHTWAVE, INC.Inventors: Mark Allen Itzler, Rafael Ben-Michael
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Patent number: 7378689Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.Type: GrantFiled: October 17, 2005Date of Patent: May 27, 2008Assignee: Princeton Lightwave, Inc.Inventors: Mark Allen Itzler, Rafael Ben-Michael
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Publication number: 20070221930Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.Type: ApplicationFiled: March 27, 2006Publication date: September 27, 2007Applicant: Princeton Lightwave, Inc.Inventors: Mark Itzler, Rafael Ben-Michael, Sabbir Rangwala
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Publication number: 20070087511Abstract: Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and a low dark count rate. Some APDs fabricated using these methods have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is substantially minimized and further wherein the device region maintains a substantially uniform gain and breakdown voltage.Type: ApplicationFiled: October 17, 2005Publication date: April 19, 2007Applicant: Princeton Lightwave, Inc.Inventors: Rafael Ben-Michael, Mark Itzler
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Publication number: 20070085158Abstract: Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of sufficient width to enable high optical coupling efficiency but the APD still exhibits a low dark count rate. These cap layers have a device area with an active region and an edge region, wherein the size of the active region is substantially matched to the mode-field diameter of an optical beam, and wherein the size of the edge region is made small so as to reduce the number of defects included. These APD designs maintain a substantially uniform gain and breakdown voltage, as necessary for practical use.Type: ApplicationFiled: October 17, 2005Publication date: April 19, 2007Applicant: Princeton Lightwave, Inc.Inventors: Mark Itzler, Rafael Ben-Michael
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Patent number: 6894322Abstract: A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.Type: GrantFiled: February 10, 2003Date of Patent: May 17, 2005Assignee: JDS Uniphase CorporationInventors: Steven Kwan, Rafael Ben-Michael, Mark Itzler
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Publication number: 20030178636Abstract: A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.Type: ApplicationFiled: February 10, 2003Publication date: September 25, 2003Applicant: JDS Uniphase CorporationInventors: Steven Kwan, Rafael Ben-Michael, Mark Itzler
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Patent number: 6560234Abstract: A new communication distribution platform for a customer premise creates a new paradigm where components from the physical layer are shared, components from the MAC layer are shared, and a common network layer is used. A single modulation unified system and shared MAC is used across multiple media. Varied implementations may chose to share only physical layer components, or MAC layer components, or both. One implementation disclosed is the use of a common physical layer modulation combined with a MAC layer with many common functions in support of delivery of IP based services within the premises. This combination optimizes customer experience, flexibility in use, provides simpler maintenance, and simpler reduced inventory requirements and operations support for service suppliers. It can be used to support either a circuit switched environment or packet switched environment.Type: GrantFiled: April 29, 1999Date of Patent: May 6, 2003Assignee: AT&T Corp.Inventors: Rafael Ben-Michael, Robert Bennett, Theodore P. Jamer, Anatoly A Tsaliovich
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Patent number: 6459692Abstract: A method of identifying and communicating the existence of Intermittent nodes in a communication network with a mixed TDMA/CSMA-CD MAC frame format, and of preventing these nodes from unnecessarily debasing existing voice channel connections. Information pertaining to intermittent nodes is included in a database for an extended operational duration and used as primary information in control of the creation of any newly requested voice channels. Intermittent nodes are treated for the purpose of assigning voice channels as existing permanent nodes, whether currently visible or not. Newly revealed intermittent nodes are added to the database through intermediate nodes. This invention increases reliability and quality of voice communications during noise/impedance level changes of the network that may render one or more nodes not visible.Type: GrantFiled: June 8, 1999Date of Patent: October 1, 2002Assignee: AT&T Corp.Inventors: Rafael Ben-Michael, Robert Bennett, Theodore P. Jamer, Robert Raymond Miller, II, Anatoly A. Tsaliovich
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Patent number: 6404822Abstract: A method and apparatus improves transmission quality of transmission media in a punctuated noise environment by terminating transmission during duration of punctuated large noise changes and alters network parameters, of the transmission media, to accommodate changes in level of stable noise conditions between punctuated large noise changes. Each stable noise level encountered is measured and its characteristics (i.e., level) is stored in a data base and associated network parameters (i.e., bit rates, bandwidth etc.) are changed accordingly and used to control or maintain quality of the transmission media.Type: GrantFiled: May 14, 1999Date of Patent: June 11, 2002Assignee: AT&T CorpInventors: Rafael Ben-Michael, Robert Bennett, Robert Raymond Miller, II
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Patent number: 5793789Abstract: An integrated light-emitting device has a laser section and a detector section. The laser section and the detector section have an active layer that is integrated along an in-line waveguide. The detector section also has a bulk layer adjacent to the active layer, where the bulk layer has a band gap energy lower than the band gap energy of the active layer. In one embodiment, the active layer is an multiple quantum well (MQW) layer, the waveguide has two quaternary layers, and the bulk layer is a bulk quaternary layer. The device, which has uncooled modes of operation for both transmitting and receiving, may be used as a transceiver in a ping-pong optical data link configuration. The device may also have a beam expander section, with the laser, detector, and beam expander sections inside a Fabry-Perot cavity, along the single in-line waveguide. In one embodiment having a 1.3 .mu.m lasing wavelength, the addition of a 1.4 .mu.Type: GrantFiled: August 20, 1996Date of Patent: August 11, 1998Assignee: Lucent Technologies Inc.Inventors: Rafael Ben-Michael, Uziel Koren