Abstract: A field-emission device is disclosed. The device comprises a solid state structure formed of a crystalline material and an amorphous material, wherein an outer surface of the solid state structure is substantially devoid of the amorphous material, and wherein a p-type conductivity of the crystalline material is higher at or near the outer surface than far from the outer surface.

Abstract: A graphite path is formed along the surface of a diamond plate, preferably a CVD diamond plate, by means of a laser or ion-implantation induced conductivity. The path advantageously can be the surface of a sidewall of a via hole drilled by the laser through the plate or a path running along a side surface of the plate from top to bottom opposed major surfaces of the plate. The graphite path is metallized, as by electroplating or electroless plating. In this way, for example, an electrically conducting connection can be made between a metallized backplane located on the bottom surface of the plate and a wire-bonding pad located on the top surface of the plate.