Patents by Inventor Rafik Nouar

Rafik Nouar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film coating and method of fabrication thereof
    Patent number: 11274360
    Abstract: A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: March 15, 2022
    Inventors: Daniele Benetti, Riad Nechache, Henri Pepin, Jennifer MacLeod, Federico Rosei, Rafik Nouar, Andranik Sarkissian
  • THIN FILM COATING AND METHOD OF FABRICATION THEREOF
    Publication number: 20190177834
    Abstract: A method and a system for film deposition, the system comprising a substrate and a negatively biased target, the target being mounted on a magnetron sputtering cathode and located at a distance from the substrate, wherein a laser beam from a pulsed laser is focused on the target, thereby triggering a magnetron plasma or ejecting vaporized and ionized material from the target in an existing magnetron plasma, the magnetron plasma sputtering material from the target depositing on the substrate.
    Type: Application
    Filed: December 13, 2017
    Publication date: June 13, 2019
    Inventors: DANIELE BENETTI, RIAD NECHACHE, HENRI PEPIN, JENNIFER MACLEOD, FEDERICO ROSEI, RAFIK NOUAR, ANDRANIK SARKISSIAN
  • Ferroelectric tunnel junction and method of fabrication thereof
    Patent number: 10056394
    Abstract: A method for fabricating a ferroelectric tunnel junction, comprising growing a hafnium zirconium oxide film barrier layer by sputtering in the presence of oxygen at a temperature of at most 425° C., on a conductive material as a bottom electrode, and depositing a conductive material as a top electrode.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: August 21, 2018
    Assignees: INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE, PLASMIONIQUE INC.
    Inventors: Andreas Ruediger, Fabian Ambriz-Vargas, Gitanjali Kolhatkar, Reji Thomas, Azza Hadj Youssef, Rafik Nouar, Andranik Sarkissian, Marc-André Gauthier