Patents by Inventor Raghu Sagar Madala
Raghu Sagar Madala has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9882609Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.Type: GrantFiled: September 29, 2016Date of Patent: January 30, 2018Assignee: QUALCOMM IncorporatedInventors: Wenqing Wu, Senthil Kumar Govindaswamy, Raghu Sagar Madala, Peiyuan Wang, Kendrick Hoy Leong Yuen, David Joseph Winston Hansquine
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Publication number: 20170019153Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.Type: ApplicationFiled: September 29, 2016Publication date: January 19, 2017Inventors: Wenqing Wu, Senthil Kumar Govindaswamy, Raghu Sagar Madala, Peiyuan Wang, Kendrick Hoy Leong Yuen, David Joseph Winston Hansquine
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Patent number: 9495899Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.Type: GrantFiled: September 25, 2013Date of Patent: November 15, 2016Assignee: QUALCOMM IncorporatedInventors: Wenqing Wu, Senthil Kumar Govindaswamy, Raghu Sagar Madala, Peiyuan Wang, Kendrick Hoy Leong Yuen, David Joseph Winston Hansquine
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Patent number: 9324402Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).Type: GrantFiled: September 8, 2014Date of Patent: April 26, 2016Assignee: QUALCOMM IncorporatedInventors: Wenqing Wu, Raghu Sagar Madala, Kendrick Hoy Leong Yuen, Karim Arabi
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Patent number: 9230627Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).Type: GrantFiled: August 5, 2014Date of Patent: January 5, 2016Assignee: QUALCOMM IncorporatedInventors: Wenqing Wu, Raghu Sagar Madala, Kendrick Hoy Leong Yuen, Karim Arabi
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Patent number: 9164729Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.Type: GrantFiled: February 5, 2013Date of Patent: October 20, 2015Assignee: QUALCOMM INCORPORATEDInventors: Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Robert P. Gilmore, Jung Pill Kim, Seung H. Kang
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Magnetic tunneling junction non-volatile register with feedback for robust read and write operations
Patent number: 9147454Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.Type: GrantFiled: March 11, 2013Date of Patent: September 29, 2015Assignee: QUALCOMM IncorporatedInventors: Zhenyu Sun, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Wenqing Wu, Peiyuan Wang -
Publication number: 20150213865Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).Type: ApplicationFiled: August 5, 2014Publication date: July 30, 2015Inventors: Wenqing WU, Raghu Sagar MADALA, Kendrick Hoy Leong YUEN, Karim ARABI
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Publication number: 20150213866Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).Type: ApplicationFiled: September 8, 2014Publication date: July 30, 2015Inventors: Wenqing WU, Raghu Sagar MADALA, Kendrick Hoy Leong YUEN, Karim ARABI
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Patent number: 9053071Abstract: Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.Type: GrantFiled: March 15, 2012Date of Patent: June 9, 2015Assignee: QUALCOMM, IncorporatedInventors: Abhishek Banerjee, Raghu Sagar Madala, Wenqing Wu, Kendrick H. Yuen, Chengzhi Pan
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Publication number: 20150145575Abstract: Aspects described herein are related to spintronic logic gates employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a spintronic logic gate is disclosed that includes a charge current generation circuit and a GSHE MTJ element. The charge current generation circuit is configured to generate a charge current representing an input bit set. The input bit set may include one or more input bit states for a logical operation. The GSHE MTJ element is configured to set a logical output bit state for the logical operation, and has a threshold current level. The GSHE MTJ element is configured to generate a GSHE spin current in response to the charge current and perform the logical operation on the input bit set by setting the logical output bit state based on whether the GSHE spin current exceeds the threshold current level.Type: ApplicationFiled: July 14, 2014Publication date: May 28, 2015Inventors: Wenqing Wu, Raghu Sagar Madala, Kendrick Hoy Leong Yuen, Karim Arabi, Robert Philip Gilmore
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Publication number: 20150145576Abstract: Aspects described herein are related to pipeline circuits employing a Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) element(s) for performing logical operations. In one aspect, a pipeline circuit is disclosed. The pipeline circuit includes a first pipeline stage and a second pipeline stage. The first pipeline stage is configured to store a first bit set and to generate a first charge current representing the first bit set. The second pipeline stage includes a first GSHE MTJ element. The first GSHE MTJ element is configured to set a first bit state for the first logical operation, and has a first threshold current level. The first GSHE MTJ element is configured to generate a first GSHE spin current in response to the first charge current. In this manner, the first GSHE MTJ element is also configured to perform the first logical operation on the first bit set.Type: ApplicationFiled: July 15, 2014Publication date: May 28, 2015Inventors: Wenqing Wu, Raghu Sagar Madala, Kendrick Hoy Leong Yuen, Karim Arabi, Robert Philip Gilmore
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Publication number: 20150084972Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.Type: ApplicationFiled: September 25, 2013Publication date: March 26, 2015Applicant: QUALCOMM IncorporatedInventors: Wenqing Wu, Senthil Kumar Govindaswamy, Raghu Sagar Madala, Peiyuan Wang, Kendrick Hoy Leong Yuen, David Joseph Winston Hansquine
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Patent number: 8838896Abstract: The present patent application discloses a method and apparatus for using external and internal memory for cancelling traffic interference comprising storing data in an external memory; and processing the data samples on an internal memory, wherein the external memory is low bandwidth memory; and the internal memory is high bandwidth on board cache. The present method and apparatus also comprises caching portions of the data on the internal memory, filling the internal memory by reading the newest data from the external memory and updating the internal memory; and writing the older data back to the external memory from the internal memory, wherein the data is incoming data samples.Type: GrantFiled: May 20, 2008Date of Patent: September 16, 2014Assignee: QUALCOMM IncorporatedInventors: Senthil Govindaswamy, Jeffrey A. Levin, Raghu Sagar Madala, Sharad Deepak Sambhwani
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Patent number: 8804413Abstract: A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an anti-ferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the anti-ferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.Type: GrantFiled: August 16, 2012Date of Patent: August 12, 2014Assignee: QUALCOMM IncorporatedInventors: Xia Li, Wenqing Wu, Jung Pill Kim, Xiaochun Zhu, Seung H. Kang, Raghu Sagar Madala, Kendrick H. Yuen
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Publication number: 20140222880Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.Type: ApplicationFiled: February 5, 2013Publication date: August 7, 2014Applicant: QUALCOMM INCORPORATEDInventors: Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Robert P. Gilmore, Jung Pill Kim, Seung H. Kang
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MAGNETIC TUNNELING JUNCTION NON-VOLATILE REGISTER WITH FEEDBACK FOR ROBUST READ AND WRITE OPERATIONS
Publication number: 20140198563Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.Type: ApplicationFiled: March 11, 2013Publication date: July 17, 2014Applicant: QUALCOMM INCORPORATEDInventors: Zhenyu Sun, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Wenqing Wu, Peiyuan Wang -
Publication number: 20140108478Abstract: A random number generator system that utilizes a magnetic tunnel junction (MTJ) that is controlled by an STT-MTJ entropy controller that determines whether to proceed with generating random numbers or not by monitoring the health of the MTJ-based random number generator is illustrated. If the health of the random number generation is above a threshold, the STT-MTJ entropy controller shuts down the MTJ-based random number generator and sends a message to a requesting chipset that a secure key generation is not possible. If the health of the random number generation is below a threshold, the entropy controller allows the MTJ-based random number generator to generate random numbers based on a specified algorithm, the output of which is post processed and used by a cryptographic-quality deterministic random bit generator to generate a security key for a requesting chipset.Type: ApplicationFiled: October 15, 2012Publication date: April 17, 2014Applicant: QUALCOMM INCORPORATEDInventors: Kangho Lee, Taehyun Kim, Xiaochun Zhu, David M. Jacobson, Raghu Sagar Madala, Wenqing Wu, Jung Pill Kim, Seung H. Kang
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Publication number: 20130245999Abstract: Sensor circuitry including probabilistic switching devices, such as spin-transfer torque magnetic tunnel junctions (STT-MTJs), is configured to perform ultra-low power analog to digital conversion and compressive sensing. The analog to digital conversion and compressive sensing processes are performed simultaneously and in a manner that is native to the devices due to their probabilistic switching characteristics.Type: ApplicationFiled: March 15, 2012Publication date: September 19, 2013Applicant: QUALCOMM IncorporatedInventors: Abhishek Banerjee, Raghu Sagar Madala, Wenqing Wu, Kendrick H. Yuen, Chengzhi Pan
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Publication number: 20130201757Abstract: A multi-free layer magnetic tunnel junction (MTJ) cell includes a bottom electrode layer, an anti-ferromagnetic layer on the bottom electrode layer, a fixed magnetization layer on the anti-ferromagnetic layer and a barrier layer on the fixed magnetization layer. A first free magnetization layer is on a first area of the barrier layer, and a capping layer is on the first free magnetization layer. A free magnetization layer is on a second area of the barrier layer, laterally displaced from the first area, and a capping layer is on the second free magnetization layer. Optionally current switches establish a read current path including the first free magnetization layer concurrent with not establishing a read current path including the second free magnetization layer. Optionally current switches establishing a read current path including the first and second free magnetization layer.Type: ApplicationFiled: August 16, 2012Publication date: August 8, 2013Applicant: QUALCOMM IncorporatedInventors: Xia Li, Wenqing Wu, Jung Pill Kim, Xiaochun Zhu, Seung H. Kang, Raghu Sagar Madala, Kendrick H. Yuen