Patents by Inventor Raghuveer Mallavarpu
Raghuveer Mallavarpu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10593665Abstract: A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.Type: GrantFiled: September 19, 2018Date of Patent: March 17, 2020Assignee: Raytheon CompanyInventors: John P. Bettencourt, Raghuveer Mallavarpu
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Publication number: 20190019790Abstract: A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.Type: ApplicationFiled: September 19, 2018Publication date: January 17, 2019Applicant: Raytheon CompanyInventors: John P. Bettencourt, Raghuveer Mallavarpu
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Patent number: 10103137Abstract: A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.Type: GrantFiled: March 24, 2017Date of Patent: October 16, 2018Assignee: Raytheon CompanyInventors: John P. Bettencourt, Raghuveer Mallavarpu
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Patent number: 9799645Abstract: A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.Type: GrantFiled: November 20, 2015Date of Patent: October 24, 2017Assignee: Raytheon CompanyInventors: John P. Bettencourt, Raghuveer Mallavarpu
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Publication number: 20170200713Abstract: A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: a source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.Type: ApplicationFiled: March 24, 2017Publication date: July 13, 2017Applicant: Raytheon CompanyInventors: John P. Bettencourt, Raghuveer Mallavarpu
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Publication number: 20170148783Abstract: A structure having: a plurality of field effect transistors (FETs) connected between a common input and a common output, each one of the field effect transistors comprises: source region, a drain region, and a gate electrode for controlling carriers through a channel region of a transistor region of the structure between the source region and the drain region; a plurality of diodes, each one of the diodes being associated with a corresponding one of the plurality of FETs, each one of the diodes having an electrode in Schottky contact with a diode region of the corresponding one of the FETs. The gate electrode and the diode electrode extend along parallel lines. The source region, the drain region, the channel region, and a diode region having therein the diode are disposed along a common line.Type: ApplicationFiled: November 20, 2015Publication date: May 25, 2017Applicant: Raytheon CompanyInventors: John P. Bettencourt, Raghuveer Mallavarpu
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Patent number: 6266629Abstract: A method is provided for large signal modeling of a field effect transistor. The method includes establishing a small signal model for the transistor, such model having a gate-source capacitance Cgs and a drain-gate capacitance Cdg, both being functions of a gate-source voltage Vgs and a drain-source voltage Vds. The s-parameters of the transistor are measured and curve fitting is applied to the measured s-parameters to establish small signal model parameters. The small signal model parameters include gate-source capacitance Cgs as a function of Vgs and Vds and gate-drain capacitance Cdg as a function of Vgs and Vds. Curve fitting is applied to Cgs and Cdg to establish large signal gate charge fitting parameters. The established large signal gate charge fitting parameters are used to express a gate-source charge Qgs and a gate-drain charge Qgd as functions of Vgs and a gate-drain voltage Vgd in a large signal model for the transistor.Type: GrantFiled: October 29, 1998Date of Patent: July 24, 2001Assignee: Raytheon CompanyInventors: Raghuveer Mallavarpu, Douglas A. Teeter
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Patent number: 5142253Abstract: A cylindrical multi-port combiner having a graceful degradation characteristic with a high degree of isolation (25 db) between ports and a high combining efficiency (>90.degree.) is disclosed. A radially-spaced inner and outer conductor forms a transmission line operating in a balanced mode. Circumferentially spaced plurality of like transmission lines have inner and outer RF absorbers at the outermost regions of the spaced adjacent inner and outer conductors, respectively. A corresponding end of each transmission line in adapted to be connected to one of a corresponding number of phase-matched RF sources. The other end of each transmission line has its inner and outer conductors connected in parallel, respectively, through stepped impedance-transforming transmission lines to form one connector for connection to an output RF load.Type: GrantFiled: May 2, 1990Date of Patent: August 25, 1992Assignee: Raytheon CompanyInventors: Raghuveer Mallavarpu, George H. MacMaster, M. Paul Puri
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Patent number: 4897609Abstract: A tilt-angle gun provides a conically-shaped electron beam formed in a magnetically-shielded region which is injected into a coaxial waveguide of the amplifier embodiment of the invention and into a coaxial cavity of the oscillator embodiment immersed in the main magnetic focussing system to form a hollow gyro beam of large radius. RF power input and the amplified rf power output are simply and easily provided through circular input and output waveguides coupled respectively to each end of the coaxial waveguide by slotted sections. The electron beam and the output rf energy are naturally physically separated so that extraction of the rf output is facilitated and occurs with little rf power loss.Type: GrantFiled: December 28, 1987Date of Patent: January 30, 1990Assignee: Raytheon CompanyInventor: Raghuveer Mallavarpu