Patents by Inventor Rainer Goebel

Rainer Goebel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010018891
    Abstract: A scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction. The scale is suited for calibrating technical devices used for scanning electron microscopy, scanning transmission electron microscopy, or scanning probe microscopy (atomic force microscopy, scanning tunneling microscopy).
    Type: Application
    Filed: December 28, 2000
    Publication date: September 6, 2001
    Applicant: Deutsche Telekom AG
    Inventors: Rainer Loesch, Hartmut Hillmer, Winfried Schlapp, Armin Poecker, Walter Betz, Rainer Goebel
  • Patent number: 6231668
    Abstract: A method for manufacturing and calibrating a scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures, and such a scale. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction.
    Type: Grant
    Filed: February 6, 1997
    Date of Patent: May 15, 2001
    Assignee: Deutsche Telekom AG
    Inventors: Rainer Loesch, Hartmut Hillmer, Winfried Schlapp, Armin Poecker, Walter Betz, Rainer Goebel