Abstract: A pseudo-substrate (1, 11) for use in the production of semiconductor components, having a carrier substrate (2, 12) with a crystalline structure and a first buffer (3, 13), which is arranged on a surface of the carrier substrate (2, 12), if appropriate on further intervening intermediate layers, wherein the first buffer (3, 13) is embodied as a single layer or as a multilayer system and includes, at least at the surface facing away from the carrier substrate (2, 12), arsenic (As) and at least one of the elements aluminum (Al) and indium (In).

Abstract: A scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction. The scale is suited for calibrating technical devices used for scanning electron microscopy, scanning transmission electron microscopy, or scanning probe microscopy (atomic force microscopy, scanning tunneling microscopy).

Abstract: A method for manufacturing and calibrating a scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures, and such a scale. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction.