Abstract: A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375?x?0.563, 0.250?y?0.500, and x/3?z?(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

Abstract: A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375?x?0.563, 0.250?y?0.500, and x/3?z?(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film.

Abstract: A dielectric composition having a high relative dielectric constant and high Q value even at high frequencies, and an electronic component including a dielectric film configured from the dielectric composition. This dielectric composition includes the composite oxide represented by general formula (aCaO+bSrO)—ZrO2 as a main component, and by a and b satisfying the relationships a?0, b?0, and 1.50<a+b?4.00.

Abstract: A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375?x?0.563, 0.250?y?0.500, and x/3?z?(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40° or more in an X-ray diffraction chart of the dielectric film.

Abstract: A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zC2O5 as a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375, 0.563, 0.250, 0.500, and x/3, (x/3)+ 1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

Abstract: A dielectric composition having a high relative dielectric constant and high Q value even at high frequencies, and an electronic component including a dielectric film configured from the dielectric composition. This dielectric composition includes the composite oxide represented by general formula (aCaO+bSrO)—ZrO2 as a main component, and by a and b satisfying the relationships a?0, b?0, and 1.50<a+b?4.00.

Abstract: A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as CA and the area occupied by the columnar structure B is set as CB, the relationship between CA and CB satisfies 0.4?CB/CA?1.1.

Abstract: A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—K? X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.

Abstract: A dielectric composition containing a complex oxide represented by the formula of A?B?C2?O?+?+5? as the main component, wherein A represents Ba, B represents at least one element selected from the group consisting of Ca and Sr, C represents at least one element selected from the group consisting of Ta and Nb, and ?, ? and ? meet the following conditions, i.e., ?+?+?=1.000, 0.000<??0.375, 0.625??<1.000, 0.000???0.375.

Abstract: A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—K? X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.

Abstract: A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as CA and the area occupied by the columnar structure B is set as CB, the relationship between CA and CB satisfies 0.4?CB/CA?1.1.

Abstract: A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC2O5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198?x?0.375, 0.389?y?0.625, and x/3?z?x/3+1/9.

Abstract: A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC2O5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x?0.281, 0.625?y<1.000, and 0.000<z?0.375.

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5???1.5 holds, where ? is the molar ratio of the A-group to the B-group.

Abstract: A dielectric composition containing a complex oxide represented by the formula of A?B?C2?O?+?+5? as the main component, wherein A represents Ba, B represents at least one element selected from the group consisting of Ca and Sr, C represents at least one element selected from the group consisting of Ta and Nb, and ?, ? and ? meet the following conditions, i.e., ?+?+?=1.000, 0.000<??0.375, 0.625??<1.000, 0.000???0.375.

Abstract: A dielectric composition contains a complex oxide represented by the formula of xAO-yB?O-zB?2O5 as the main component, wherein A represents at least one element selected from the group made of Ba, Ca and Sr, B? represents at least one element selected from the group made of Mg, Zn and Ni, B? represents at least one element selected from the group made of Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.375?x?0.563, 0.250?y?0.500, and x/3?z?x/3+1/9. An electronic component using the dielectric composition is also provided.

Abstract: A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC2O5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x?0.281, 0.625?y<1.000, and 0.000<z?0.375.

Abstract: A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC2O5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198?x?0.375, 0.389?y?0.625, and x/3?z?x/3+1/9.

Abstract: A dielectric composition contains a complex oxide represented by the formula of xAO-yB?O-zB?2O5 as the main component, wherein A represents at least one element selected from the group made of Ba, Ca and Sr, B? represents at least one element selected from the group made of Mg, Zn and Ni, B? represents at least one element selected from the group made of Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.375?x?0.563, 0.250?y?0.500, and x/3?z?x/3+1/9. An electronic component using the dielectric composition is also provided.

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5???1.5 holds, where ? is the molar ratio of the A-group to the B-group.