Abstract: A method for electrochemical impedance spectroscopy uses interdigitated electrodes functionalized with a first species and nanoparticles functionalized with a second species that preferentially attaches to the first species. The nanoparticles are composed of a material with a dielectric constant (k value) greater than 2. The chemically functionalized electrodes are then exposed to a solution containing the chemically functionalized nanoparticles which then become immobilized on the electrodes through the attachment of the first species to the second species. The impedance spectrum is measured and an amount of the first species is then determined from the measured spectrum. Because the high-k dielectric nanoparticles increase the double-layer capacitive impedance, the sensitivity of determining the amount of the first species attached to the second species is enhanced.

Abstract: A method for direct electrical detection of proteins, peptides and the like, and their interactions includes an electrode arrangement, a current/voltage provider, and a circuit analyzer. The electrode arrangement has an interdigitated electrode pair including a first electrode and a second electrode. Coupled to the electrode arrangement is a signal generator adapted to provide a signal (e.g., an alternating current or voltage) having a selected range of frequencies. The analyzer is coupled to the electrode arrangement and is operative to analyze an electrical parameter of the circuit as the signal is applied. An analytic method includes measuring changes in one or more parameters of the circuit over the range of frequencies. By such measurement, the device can determine whether a target moiety has been bound by a probe attached to the electrode(s). The device can also specifically identify the intermolecular system detected, i.e.

Abstract: A biosensor system includes a functionalized interdigitated electrode, functionalized nanoparticles, a current/voltage signal generator, and a circuit analyzer. The interdigitated electrode can be functionalized by coating an exposed surface with first biomolecular probes. The nanoparticles are functionalized by coating an outer surface with second biomolecular probes. A signal generator provides a signal (e.g., an alternating current or voltage) having a selected range of frequencies. A circuit analyzer analyzes electrical parameters of the circuit as the signal is applied. Sensitivity is increased by the presence of functionalized nanoparticles in the system. An analytic method includes measuring changes in electrical parameters of the circuit over the range of frequencies. Using these measurements, the biosensor system can determine whether a target biomolecule is bound.

Abstract: A method for direct electrical detection of proteins, peptides and the like, and their interactions includes an electrode arrangement, a current/voltage provider, and a circuit analyzer. The electrode arrangement has an interdigitated electrode pair including a first electrode and a second electrode. Coupled to the electrode arrangement is a signal generator adapted to provide a signal (e.g., an alternating current or voltage) having a selected range of frequencies. The analyzer is coupled to the electrode arrangement and is operative to analyze an electrical parameter of the circuit as the signal is applied. An analytic method includes measuring changes in one or more parameters of the circuit over the range of frequencies. By such measurement, the device can determine whether a target moiety has been bound by a probe attached to the electrode(s). The device can also specifically identify the intermolecular system detected, i.e.

Abstract: An analysis device includes an electrode arrangement, a current/voltage provider, and a circuit analyzer. The electrode arrangement has an interdigitated electrode pair including a first electrode and a second electrode. Coupled to the electrode arrangement is a signal generator adapted to provide a signal (e.g., an alternating current or voltage) having a selected range of frequencies. The analyzer is coupled to the electrode arrangement and is operative to analyze an electrical parameter of the circuit as the signal is applied. An analytic method includes measuring changes in one or more parameters of the circuit over the range of frequencies. By such measurement, the device can determine whether a target moiety has been bound by a probe attached to the electrode(s). The device can also specifically identify the intermolecular system detected, i.e., by “finger-printing” the electrical response of each molecule or intermolecular complex.

Abstract: A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the oxidizing and reducing agents, and the number of etching phases.

Abstract: An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

Abstract: Improved electrochemical planarization of an anode surface is performed by rotating either an anode or a cathode and applying a voltage therebetween. The cathode has a surface facing the anode and is configured such that the surface does not extend over all of the anode surface to be planarized during rotation of the anode or cathode. Preferably, the anode is a patterned or unpatterned semiconductor wafer with electroplated metal thereon, such as copper.

Abstract: An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

Abstract: An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

Abstract: A method for planarizing an element using an electrochemical polishing process includes contacting a patterned substrate with a polishing solution including 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP) while applying an electric potential to the substrate. The patterned substrate is preferably a copper electroplated trenched silicon wafer. The potential is maintained within a predetermined limiting current plateau. The resulting electrochemical reaction is limited by mass transport of the copper, and creates a salt film along the copper surface. The copper layer becomes planar due to ohmic leveling, migration smoothing, and diffusion smoothing. Using HEDP enables the planarization of the copper surface without causing dishing or without completely removing the copper from the wafer.

Abstract: The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of a reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the metal source and reducing agents, and the number of deposition phases.

Abstract: An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

Abstract: An atomic layer deposition method to deposit a oxide thin film is provided. The method employs a nitrate ligand in a first hafnium precursor as an oxidizer for a second hafnium precursor to form the hafnium oxide. Using a hafnium nitrate precursor and a hafnium chloride precursor, the method is well suited for the deposition of a high k hafnium oxide dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

Abstract: A method of forming a layer of high-&kgr; dielectric material in an integrated circuit includes preparing a silicon substrate; depositing a first layer of metal oxide using ALD with a metal nitrate precursor; depositing another layer of metal oxide using ALD with a metal chloride precursor; and completing the integrated circuit.

Abstract: The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of a reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the metal source and reducing agents, and the number of deposition phases.

Abstract: Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precursors is well suited to forming high dielectric constant materials on hydrogen passivated silicon surfaces.

Abstract: The present invention relates to a method of depositing a metallic film on a substrate. This method uses a carrier gas to deposit a source metal in the presence of an aqueous reducing agent such that the rate of deposition can be controlled by controlling the flow rate of the carrier gas.

Abstract: A bright, short wavelength blue-violet phosphor for electroluminescent displays comprises an alkaline-based halide as a host material and a rare earth as a dopant. The host alkaline chloride can be chosen from the group II alkaline elements, particularly strontium chloride (SrCl.sub.2) or calcium chloride (CaCl.sub.2), which, with a europium (Eu) or cerium (Ce) rare earth dopant, electroluminesces at a peak wavelength of 404 and 367 nanometers (nm) respectively. The resulting emissions have CIE chromaticity coordinates which lie at the boundary of the visible range for the human eye thereby allowing a greater range of colors for full color flat panel electroluminescent (FPEL) displays.