Patents by Inventor Rajesh Chopdekar

Rajesh Chopdekar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230107190
    Abstract: A magnetic tunnel junction may include a platinum-containing layer including at least one of Ir, Hf or Ru in contact with a free layer, or a combination of a platinum layer and a Hf or Ir layer formed on opposite sides of a free layer.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 6, 2023
    Inventors: Alan KALITSOV, Bhagwati PRASAD, Rajesh CHOPDEKAR, Lei WAN, Tiffany SANTOS
  • Patent number: 8450047
    Abstract: A method is provided for achieving specific magnetic states with a given vortex chirality in artificial kagome spin ice building block structures containing one or more hexagonal rings of ferromagnetic islands created with electron beam lithography, where a subgroup of the ferromagnetic islands have a smaller width and therefore higher switching field than the other normal (wider) islands and are placed at specific positions in each of the rings. The positioning of the islands determines the magnetic state of the building block structure during magnetization reversal, and determines the chirality of the magnetic vortices that occur in each ring.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: May 28, 2013
    Assignee: Paul Scherrer Institut
    Inventors: Laura Heyderman, Elena Mengotti, Danilo Zanin, Rajesh Chopdekar, Hans-Benjamin Braun, Remo Huegli, Gerard Duff
  • Patent number: 8415086
    Abstract: A method is provided for achieving low energy states for the study of chirality kagome spin ice structures, the method having the steps of providing a silicon substrate; spin coating a polymethyl acrylate resist on said silicon substrate; providing an electron beam writer; exposing said coated substrate to an electron beam from said electron beam writer; positioning more than one thin island ferromagnetic island structure along a honeycomb lattice of said kagome spin ice component, wherein said positioning being along a determined magnetization direction of said lattice and wherein said island structures providing a mechanism in which chirality is controlled.
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: April 9, 2013
    Assignee: Paul Scherrer Institut
    Inventors: Laura Heyderman, Elena Mengotti, Danilo Zanin, Rajesh Chopdekar, Hans-Benjamin Braun, Remo Hügli, Gerard Duff
  • Publication number: 20120189964
    Abstract: A method is provided for achieving specific magnetic states with a given vortex chirality in artificial kagome spin ice building block structures containing one or more hexagonal rings of ferromagnetic islands created with electron beam lithography, where a subgroup of the ferromagnetic islands have a smaller width and therefore higher switching field than the other normal (wider) islands and are placed at specific positions in each of the rings. The positioning of the islands determines the magnetic state of the building block structure during magnetization reversal, and determines the chirality of the magnetic vortices that occur in each ring.
    Type: Application
    Filed: February 24, 2012
    Publication date: July 26, 2012
    Applicant: PAUL SCHERRER INSTITUT
    Inventors: Laura Heyderman, Elena Mengotti, Danilo Zanin, Rajesh Chopdekar, Hans-Benjamin Braun, Remo Huegli, Gerard Duff
  • Publication number: 20120171619
    Abstract: A method is provided for achieving low energy states for the study of chirality kagome spin ice structures, the method having the steps of providing a silicon substrate; spin coating a polymethyl acrylate resist on said silicon substrate; providing an electron beam writer; exposing said coated substrate to an electron beam from said electron beam writer; positioning more than one thin island ferromagnetic island structure along a honeycomb lattice of said kagome spin ice component, wherein said positioning being along a determined magnetization direction of said lattice and wherein said island structures providing a mechanism in which chirality is controlled.
    Type: Application
    Filed: April 15, 2011
    Publication date: July 5, 2012
    Applicant: PAUL SCHERRER INSTITUT
    Inventors: Laura Heyderman, Elena Mengotti, Danilo Zanin, Rajesh Chopdekar, Hans-Benjamin Braun, Remo Hügli, Gerard Duff
  • Patent number: 6541336
    Abstract: A method of fabricating a bipolar transistor. The method comprising: forming an emitter opening in a dielectric layer to expose a surface of a base layer; performing a clean of the exposed surface, the clean removing any oxide present on the surface and passivating the surface to inhibit oxide growth; and forming an emitter layer on the surface after the performing a clean.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: April 1, 2003
    Assignee: International Business Machines Corporation
    Inventors: Marc W. Cantell, Rajesh Chopdekar, Peter J. Geiss