Abstract: A sense amplifier includes a latch, first and second switching circuitry, and control circuitry. The first switching circuitry selectively couples a voltage supply node and/or a voltage return node of the latch to a voltage supply and/or a voltage return of the sense amplifier, respectively, as a function of a first control signal. The second switching circuitry couples a first sensing node in the sense amplifier with a first bit line of a first sub-bank in one of multiple memory banks in a memory device as a function of a second control signal, and couples a second sensing node with a second bit line of a second sub-bank as a function of the second control signal. The control circuitry imparts an imbalance between the first and second sensing nodes which varies as a function of a third control signal.

Abstract: A decoder circuit to decode an address for accessing a memory cell in a memory array includes address latch circuitry, inverter circuitry, and first address pre-decode circuitry. The address latch circuitry receives an address signal and generates address holding signals during a setup period. The address latch circuitry latches the address holding signals during an address hold period following the setup period. The inverter circuitry receives the address signal and generates a complementary address signal. The first address pre-decode circuitry decodes the address signal and the address holding signals during the setup period to generate a first pre-decode address signal at an output of the first address pre-decode circuitry. In addition, the first address pre-decode circuitry decodes the address holding signals during the address hold period to maintain the first pre-decode address signal at the output of the first address pre-decode circuitry.