Abstract: A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract: An athermal optical modulator includes a waveguide, a ring resonator configured to receive light input from the waveguide and output modulated light to the waveguide, the ring resonator including a ridge unit located at a center of the ring resonator in a vertical section, a first contact connected to one side of the ridge unit and a second contact connected to the other side of the ridge unit, the first contact and the second contact forming paths for applying electricity to the ring resonator to form an electric field in the ring resonator, and a polymer layer covering the ridge unit.

Abstract: Provided are an athermal waveguide and a method of manufacturing the same. The athermal waveguide includes: a substrate having a protruded region; a first material layer formed on the protruded region to counteract thermal expansion; and a second material layer formed on the first material layer a position corresponding to the protruded region and formed of a same base material as the protruded region.