Abstract: Disclosed is a measurement device for a vibration device of a concrete-block production plant. The vibration device has a vibrating table and impact strips arranged parallel to each other and parallel to the ground with relation to their longitudinal axes. The measurement device comprises at least one measurement unit for distance. The measurement unit is arranged above the vibrating table and the impact strips, wherein the measurement unit can be guided orthogonally to the impact strips and parallel to the ground using a guide unit. During the guiding process, the measurement unit operates at predefined measuring positions and/or positions determined during the guiding process via the impact strips and the vibrating table, using the measurement unit, the vertical distances from the top sides of the impact strips and/or the vibrating table to reference positions, which result from the heights of the measurement unit at the respective measuring positions, can be determined.

Abstract: The invention relates to a marking precursor incorporating a chelator or fluorination group for radiolabelling with 44Sc, 47Sc, 55Co, 62Cu, 64Cu, 67Cu, 66Ga, 67Ga, 68Ga, 89Zr, 86Y, 90Y, 90Nb, 99mTc, 111In, 135Sm, 140Pr, 159Gd, 149Tb, 160Tb, 161Tb, 165Er, 166Dy, 166Ho, 175Yb, 177Lu, 186Re, 188Re, 213Bi and 225Ac or with 18F, 131I or 211At, and one or two biological targeting vectors which are coupled to the chelator or fluorinating group via one or more squaric acid groups.

Abstract: The invention relates to a marking precursor incorporating a chelator or fluorination group for radiolabelling with 44Sc, 47Sc, 55Co, 62Cu, 64Cu, 67Cu, 66Ga, 67Ga, 68Ga, 89Zr, 86Y, 90Y, 90Nb, 99mTc, 111In, 135Sm, 140Pr, 159Gd, 149Tb, 160Tb, 161Tb, 165Er, 166Dy, 166Ho, 175Yb, 177Lu, 186Re, 188Re, 213Bi and 225Ac or with 18F, 131I or 211At, and one or two biological targeting vectors which are coupled to the chelator or fluorinating group via one or more squaric acid groups.

Abstract: The invention relates to a marking precursor incorporating a chelator or fluorination group for radiolabelling with 44Sc, 47Sc, 55Co, 62Cu, 64Cu, 67Cu, 66Ga, 67Ga, 68Ga, 89Zr, 86Y, 90Y, 90Nb, 99mTc, 111ln, 135Sm, 140Pr, 159Gd, 149Tb, 160Tb, 161Tb, 165Er, 166Dy, 166Ho, 175Yb, 177Lu, 186Re, 188Re, 213Bi and 225Ac or with 18F, 131I or 211At, and one or two biological targeting vectors which are coupled to the chelator or fluorinating group via one or more squaric acid groups.

Abstract: The present invention is related to silicon nanoparticles, a pharmaceutical composition comprising silicon nanoparticles, a method for synthesis of the silicon nanoparticles and their use for in vivo diagnostics, visualization of drug delivery or staining of cells, biological processes or pathways. The silicon nanoparticles are characterized that they comprise a silicon core of a size of 1 to 10 nm and are terminated with allylamine or poly(allylamine) comprising up to 10 allylamine groups.

Abstract: The present invention relates to a test system for high-voltage technology devices, in particular shunt reactors, as defined in the preamble of independent patent claim 1. The invention also relates to a method which can be carried out with this test system and is intended to test high-voltage technology devices according to coordinate patent claim 5. The general idea of the test system according to the invention is to provide a continuously adjustable inductance and a capacitance, which can be adjusted in discrete steps, on the secondary side of the test transformer in such a manner that said components form a series resonant circuit together with the test object in the form of an inductance.

Abstract: A process for producing at least one photonic component (32, 33, 35, 39, 41), includes inserting the photonic component (32, 33, 35, 39, 41) into a surface layer (12) of a semiconductor wafer and/or within a semiconductor wafer, especially of a semiconductor chip (11, 31, 34, 38, 40) for the simpler and more cost-effective production with the most desired possible three-dimensional structures. At least one laser beam (22) is coupled into the material of the surface layer (12) and/or of the semiconductor wafer, in which the laser beam (22) is focused at a predetermined depth in the material. At least one property of the material and/or the material structure is changed in the area of focus (23, 36).

Abstract: The present invention relates to a test system for high-voltage technology devices, in particular shunt reactors, as defined in the preamble of independent patent claim 1. The invention also relates to a method which can be carried out with this test system and is intended to test high-voltage technology devices according to coordinate patent claim 5. The general idea of the test system according to the invention is to provide a continuously adjustable inductance and a capacitance, which can be adjusted in in discrete steps, on the secondary side of the test transformer in such a manner that said components form a series resonant circuit together with the test object in the form of an inductance.

Abstract: The present invention is related to silicon nanoparticles, a pharmaceutical composition comprising silicon nanoparticles, a method for synthesis of the silicon nanoparticles and their use for in vivo diagnostics, visualization of drug delivery or staining of cells, biological processes or pathways. The silicon nanoparticles are characterised that they comprise a silicon core of a size of 1 to 10 nm and are terminated with allylamine or poly(allylamine) comprising up to 10 allylamine groups.

Abstract: A process for producing at least one photonic component (32, 33, 35, 39, 41), includes inserting the photonic component (32, 33, 35, 39, 41) into a surface layer (12) of a semiconductor wafer and/or within a semiconductor wafer, especially of a semiconductor chip (11, 31, 34, 38, 40) for the simpler and more cost-effective production with the most desired possible three-dimensional structures. At least one laser beam (22) is coupled into the material of the surface layer (12) and/or of the semiconductor wafer, in which the laser beam (22) is focused at a predetermined depth in the material. At least one property of the material and/or the material structure is changed in the area of focus (23, 36).

Abstract: The invention relates to a new method for the control of enzymatic duplication of nucleic acids by the section via incomplete complementary strands. Fields of application of the invention are research, medical practice, gene-based analytics of biotechnological, agricultural and foodstuff products as well as criminology.

Abstract: In a high-voltage circuit breaker having two arcing contacts arranged coaxially relative to one another and having an insulating nozzle which in the closed state is blocked by a first arcing contact the first arcing contact has a shaft having a greater diameter and an end element having a smaller diameter, the shaft blocking a through-channel of the insulating body. The through-channel is cylindrical along a length that is smaller than the length of the end element. As a result, the extinguishing gas starts to flow when the end element is pulled back into the through-channel.

Abstract: A high-voltage power breaker includes two arcing contact pieces which are separated from one another when disconnected and between which an arc is struck in an arcing area. The arcing area is filled with a quenching gas, where the quenching gas has been heated by the arc flowing out from a constriction point of an insulating nozzle. The insulating nozzle surrounds the arcing area, through at least one outlet flow channel which has a number of areas which the quenching gas passes through successively. The first area which faces the constriction point of the nozzle has a specific flow resistance which is less than that of the constriction point. The first area in the outlet flow direction of the quenching gas is followed by at least one second area, one third area and one fourth area. The specific flow resistance of the second and fourth areas are each greater than the specific flow resistance of the immediately preceding area in the outlet flow direction.