Abstract: A a semiconductor component (1a, 1b) having a front side and an opposite rear side and also side surfaces, and also at least one emitter (2a, 2b) and at least one base (3a, 3b), wherein a pn junction (4a, 4b) is formed between emitter (2a, 2b) and base (3a, 3b) and the emitter (2a, 2b) extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer (6a, 6b) is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 1012 cm-2. A method for singulating a semiconductor component (1a, 1b) having a pn junction is also provided.

Abstract: A a semiconductor component (1a, 1b) having a front side and an opposite rear side and also side surfaces, and also at least one emitter (2a, 2b) and at least one base (3a, 3b), wherein a pn junction (4a, 4b) is formed between emitter (2a, 2b) and base (3a, 3b) and the emitter (2a, 2b) extends parallel to the front and/or rear side. At least one side surface is a passivated separating surface (T), at which a separating surface passivation layer (6a, 6b) is arranged, which has stationary charges having a surface charge density at the separating surface (T) with a magnitude of greater than or equal to 1012 cm-2. A method for singulating a semiconductor component (1a, 1b) having a pn junction is also provided.

Abstract: A semiconductor component having at least one emitter, at least one base, and a pn junction formed between emitter and base, having at least one non-metallic transverse conduction layer for the transverse conduction of majority charge carriers of the emitter. The emitter includes the transverse conduction layer and/or the transverse conduction layer is formed parallel to the emitter and in a manner electrically conductively connected thereto, and having a break side, at which the semiconductor component was singulated. A transverse conduction avoidance region is formed and arranged at the break side such that the transverse conductivity is reduced by at least a factor of 10, wherein the transverse conduction avoidance region has a depth (TQ) in the range of 5 ?m to 500 ?m, in particular 10 ?m to 200 ?m, perpendicular to the break side. A method for singulating a semiconductor component is also provided.

Abstract: A photovoltaic solar cell with a front face designed for coupling light, including at least one cutout (4) extending from the front face to the rear face in the semiconductor substrate (1) of a base doping type, at least one metal feedthrough structure (10), wherein the feedthrough structure (10) is guided in the cutout (4) from the front face to the rear face of the semiconductor substrate and is connected in an electrically conductive manner to the metal front face contact structure (9), which is connected in an electrically conductive manner to an emitter region (2) of the opposite doping to the base doping type, formed on the front face, and at least one rear face contact structure (7), which is connected to the feedthrough structure (10) in an electrically conductive manner and is arranged on the electrically insulating insulation layer (6) on the rear face and covers the isolation layer at least in the regions surrounding the recess (4), and therefore the rear face contact structure (7) is electrically

Abstract: The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the

Abstract: A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.

Abstract: A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

Abstract: A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

Abstract: The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Abstract: A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

Abstract: The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the

Abstract: A method for producing a photovoltaic solar cell, including the following steps: A. texturizing a front (2) of a semiconductor substrate; B. generating a selective emitter doping on the front (2) of the semiconductor substrate by generating on the front (2) a first low-doped region (4) and a local high-doped region (3) within the first low-doped region; and C. applying at least one metal emitter contact structure to the front (2) of the semiconductor substrate, at least in the regions of local high doping, wherein, between method steps B and C, a respective silicon oxide layer (5a, 5b) is generated in a method step B1 simultaneously on the front and back of the semiconductor substrate via thermal oxidation.

Abstract: A method for producing a solar cell from a silicon wafer, including the following process steps: A) texturizing one side of the silicon substrate (1) for improving the absorption or removing saw damage on one side of the silicon substrate (1); B) generating an emitter area (2) on one side of the silicon substrate (1) by diffusing in a doping material for forming a pn transition; C) removing a glass layer which comprises the doping material; D) applying a masking layer (3) which is a dielectric layer; E) removing one part of the material of the silicon substrate (1); F) applying metal structures (5, 6) for electrically contacting the solar cell. It is significant that thermal oxidation is performed between the process steps E and F for forming an oxide layer (4) and that the masking layer (3) and the oxide layer (4) remain on the silicon substrate (1) in the subsequent process steps.

Abstract: A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.

Abstract: A solar cell, in particular for connecting to a solar cell module, including at least one metallic base contact, at least one metallic emitter contact (5) and a semi-conductor structure having at least one base area and at least one emitter area (3). The base area and emitter area (2,3) are at least partially adjacent to each other forming a pn-junction, the base contact (6) being connected in an electrically conductive manner to the base area (2), the emitter contact (5) being connected in an electrically conductive manner to the emitter area (3), and the solar cells being arranged on the contact side (1) as a base and emitter contact (6,5). Essentially, the solar cell includes several metallic emitter contacts which are connected in an electrically conductive manner to the emitter area (3) and several metallic base contacts which are connected in an electrically conductive manner to the base area (2).

Abstract: An electrical contact is applied on a semiconducting substrate, such as a solar cell. A layer of metallic powder is applied on the substrate. A laser beam is the guided over the substrate for local sintering and/or melting of the metallic powder. The non-sintered or non-melted metallic powder is then removed from the substrate.

Abstract: The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Abstract: The invention relates to a method for simultaneous doping and oxidizing semiconductor substrates and also to doped and oxidized semiconductors substrates produced in this manner. Furthermore, the invention relates to the use of this method for producing solar cells.

Abstract: A semiconductor component includes at least one surface, at least one trench formed in the at least one surface and at least one edge structured and arranged on the at least one surface and formed by the at least one trench. Additionally, the semiconductor component includes an electric contact arranged on the at least one edge, wherein the at least one surface provides for at least one of electric and optical power input and output to the semiconductor component.

Abstract: A method of electrically contacting a semiconductor layer (13) coated with at least one dielectic layer (12) which is coated with a metal layer the metal layer (11) is applied on the dielectric layer (12) and the metal layer (11) is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation (9) in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer (11), the dielectric layer (12) and the semiconductor layer (13) are located directly underneath the metal layer (11) and upon solidification, leads to an electrical contact between the semiconductor layer (13) and the metal layer (11).