Abstract: A humidifying device has a plate stack with channel plates stacked in stacking direction in the plate stack. The channel plates have a longitudinal axis perpendicular to the stacking direction. One or more channel plates have a first and a second channel partial plate arranged on each other in stacking direction, and each provided with a circumferentially extending frame and stays arranged between oppositely positioned sides of the frame. The stays are slanted to the longitudinal axis. The stays of the first and second channel partial plates cross each other, viewed in the stacking direction. Semipermeable layers separate a first group of flow channels and a second group of flow channels from each other in the plate stack. Flow channels of the first group alternate with flow channels of the second group in the stacking direction. The first or second group of flow channels extends along the longitudinal axis.

Abstract: Various shaped abrasive particles are disclosed. Each shaped abrasive particle includes a body having at least one major surface and a side surface extending from the major surface.

Abstract: In one embodiment, the optoelectronic semiconductor component includes at least one optoelectronic semiconductor chip for generating radiation and a housing, in which the at least one optoelectronic semiconductor chip is hermetically encapsulated. The housing includes a housing cover which is secured to a housing main part by a connection means. The housing additionally includes a gas exchange channel which is hermetically sealed by a seal.

Abstract: In an embodiment a method includes providing a growth substrate with a plurality of semiconductor bodies for the semiconductor devices, wherein each semiconductor body comprises electrical contact structures and a separation layer arranged towards the growth substrate, arranging a rigid first auxiliary carrier on a side of the semiconductor bodies facing away from the growth substrate, wherein the first auxiliary carrier comprises a first detachment layer, detaching the growth substrate by laser radiation, wherein the laser radiation is absorbed in the separation layer, arranging a rigid second auxiliary carrier on a side of the semiconductor bodies facing away from the first auxiliary carrier, wherein the second auxiliary carrier comprise a second detachment layer, detaching the first auxiliary carrier by laser radiation, wherein the laser radiation is absorbed in the first detachment layer and the separation layer still extending continuously over the growth substrate while detaching and mechanically and el

Abstract: An optoelectronic semiconductor chip includes a carrier, a semiconductor body having an active region that generates and/or receives radiation, and an insulation layer wherein the semiconductor body is fastened on the carrier with a connecting layer; the carrier extends in a vertical direction between a first main surface facing toward the semiconductor body, and a second main surface facing away from the semiconductor body, and a lateral surface connects the first main surface and the second main surface to one another; a first region of the lateral surface of the carrier has an indentation; a second region of the lateral surface runs in the vertical direction between the indentation and the second main surface; the insulation layer at least partially covers each of the semiconductor body and the first region; and the second region is free of the insulation layer.

Abstract: A device is intended for a laser lift-off method to sever at least one layer from a carrier. The device includes a laser that generates pulsed laser radiation and at least one beam splitter. The laser radiation is divided into at least two partial beams by the at least one beam splitter. The partial beams are superimposed in an irradiation plane, the irradiation plane being provided such that a major side of the carrier remote from the layer is arranged therein. At the irradiation plane, an angle (?) between the at least two partial beams is at least 1.0°.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: A method for slicing a monocrystalline semiconductor layer (116) from a semiconductor single crystal (100) comprising: providing a semiconductor single crystal (100) having a uniform crystal structure; locally modifying the crystal structure within a separating plane (104) in the semiconductor single crystal (100) into an altered microstructure state by means of irradiation using a laser (106); and removing the modified separating plane (104) by means of selective etching.

Abstract: A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion means, the conversion means being applied to a main carrier face of a carrier, arranging the conversion means such that it faces the main radiation face and has a spacing relative to the main radiation face, and releasing the conversion means from the carrier and applying the conversion means to the main radiation face by irradiation and heating of an absorber constituent of the conversion means and/or of a release layer located between the conversion means and the carrier with a pulsed laser radiation which passes through the carrier.

Abstract: A method for slicing a monocrystalline semiconductor layer (116) from a semiconductor single crystal (100) comprising: providing a semiconductor single crystal (100) having a uniform crystal structure; locally modifying the crystal structure within a separating plane (104) in the semiconductor single crystal (100) into an altered microstructure state by means of irradiation using a laser (106); and removing the modified separating plane (104) by means of selective etching.

Abstract: A device is intended for a laser lift-off method to sever at least one layer from a carrier. The device includes a laser that generates pulsed laser radiation and at least one beam splitter. The laser radiation is divided into at least two partial beams by the at least one beam splitter. The partial beams are superimposed in an irradiation plane, the irradiation plane being provided such that a major side of the carrier remote from the layer is arranged therein. At the irradiation plane, an angle (?) between the at least two partial beams is at least 1.0°.

Abstract: The invention is directed to a thermoplastic film having a matte surface comprising: a core layer of a thermoplastic polymer, the core layer having a first side and a second side, and a matte surface layer on a first side of the core layer, the matte surface layer comprising a blend of (i) a copolymer of ethylene and propylene or a terpolymer of ethylene, propylene and a C.sub.4 to C.sub.10 alpha-olefin or a propylene homopolymer; (ii) an ethylene polymer and (iii) a polydialkylsiloxane selected from the group consisting of (1) a polydialkylsiloxane having a number average molecular weight above about 250,000, typically above about 300,000 and a viscosity of above about 10,000,000 cSt, usually ranging from about 15,000,000 to about 20,000,000 cSt., and (2) a polydialkylsiloxane functionalized polyolefin. The external surface of the matte surface layer demonstrates a coefficient of friction ranging from about 0.1 to about 0.85 as determined by ASTM D1894 with an 18.14 kg (4 lb.) pound sled.

Abstract: A block-resistant film is described which comprises a core layer of a thermoplastic polymer having a first side and a second side; a functional layer which is printable or sealable or treatable for printing or sealing is on the first side of the core layer, and a block-resistant layer is on the second side of the core layer. The block-resistant layer comprises a thermoplastic polymer and an amount of a polydialkylsiloxane, based upon the entire weight of the block-resistant layer, sufficient to inhibit blocking of the block-resistant layer to the functional layer when they are in contact and which polydialkylsiloxane deposits silicon onto the functional layer but the amount of silicon deposited is not substantially detrimental to the printing function or the sealing function.

Abstract: An implement for removing a tree stump or the like defined by a first portion directly engaging the article under removal in a biting relationship and a second portion partly surrounding the article and moving into a confining relationship with the latter. The implement is mounted on a framework for pivotal movement. A manually controlled mechanism defines a removal location by pivotal action and where a locking bar serves to maintain the latter. Ample leverage is afforded for ready one-man operation.