Abstract: The invention refers to a fuel vapor storage and recovery apparatus comprising a housing (2) defining at least first and second compartments, at least one compartment being filled with an adsorbent material, at least one tank port (5) connectable to a fuel tank vent line, at least one atmospheric vent port (7), an outer housing member (8) defining a first outer compartment (3), an inner housing member defining a second inner compartment (4), the first outer compartment (3) encompassing the second inner compartment (4), wherein the inner housing member (9) is fitted into the outer housing member (8) at one end of the housing (2), such that a wall (13) of the inner housing member (9) engages an inner wall of the outer housing member (8) and wherein the inner housing member (9) and the outer housing member (8) are sealed against each other by means of a closure cap (14).

Abstract: The invention refers to a fuel vapor storage and recovery apparatus comprising a housing (2) defining at least first and second compartments, at least one compartment being filled with an adsorbent material, at least one tank port (5) connectable to a fuel tank vent line, at least one atmospheric vent port (7), an outer housing member (8) defining a first outer compartment (3), an inner housing member defining a second inner compartment (4), the first outer compartment (3) encompassing the second inner compartment (4), wherein the inner housing member (9) is fitted into the outer housing member (8) at one end of the housing (2), such that a wall (13) of the inner housing member (9) engages an inner wall of the outer housing member (8) and wherein the inner housing member (9) and the outer housing member (8) are sealed against each other by means of a closure cap (14).

Abstract: An airbag is pushed in portions by at least one slide means into at least one compartment in order to generate the folding. So that even complex folds are possible using a relatively simple apparatus, in accordance with the invention the airbag is arranged on the apparatus with a first portion in a substantially vertical position, and a second portion of the airbag is pushed into a compartment, during which the second portion is pre-tensioned by the weight of the first portion in front of the associated slide means. Further provided is pushing the airbag in a first direction into at least one first compartment and pushing in a second direction into at least one second compartment, this second direction being directed at an angle in relation to the first direction.

Abstract: An airbag is pushed in portions by at least one slide means into at least one compartment in order to generate the folding. So that even complex folds are possible using a relatively simple apparatus, in accordance with the invention the airbag is arranged on the apparatus with a first portion in a substantially vertical position, and a second portion of the airbag is pushed into a compartment, during which the second portion is pre-tensioned by the weight of the first portion in front of the associated slide means. Further provided is pushing the airbag in a first direction into at least one first compartment and pushing in a second direction into at least one second compartment, this second direction being directed at an angle in relation to the first direction.

Abstract: An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Abstract: A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.

Abstract: An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r.f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.

Abstract: The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.