Patents by Inventor Ramakrishnan Parthasarathy

Ramakrishnan Parthasarathy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130248713
    Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.
    Type: Application
    Filed: August 1, 2012
    Publication date: September 26, 2013
    Applicant: Direct Source International, LLC
    Inventors: Boris Gelmont, Tatiana Globus, Robert M. Weikle, Arthur Weston Lichtenberger, Nathan Swami, Ramakrishnan Parthasarathy, Alexei Bykhovski
  • Patent number: 8525115
    Abstract: A method and apparatus for enhanced THz radiation coupling to molecules, includes the steps of depositing a test material near the discontinuity edges of a slotted member, and enhancing the THz radiation by transmitting THz radiation through the slots. The molecules of the test material are illuminated by the enhanced THz radiation that has been transmitted through the slots, thereby producing an increased coupling of EM radiation in the THz spectral range to said material. The molecules can be bio-molecules, explosive materials, or species of organisms. The slotted member can be a semiconductor film, a metallic film, in particular InSb, or layers thereof. THz detectors sense near field THz radiation that has been transmitted through said slots and the test material.
    Type: Grant
    Filed: August 1, 2012
    Date of Patent: September 3, 2013
    Assignee: University of Virginia Patent Foundation
    Inventors: Boris Gelmont, Tatiana Globus, Nathan Swami, Robert M Weikle, Arthur Weston Lichtenberger, Ramakrishnan Parthasarathy, Alexei Bykhovski