Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: Methods and apparatus for use of a fill on demand ampoule are disclosed. The fill on demand ampoule may refill an ampoule with precursor concurrent with the performance of other deposition processes. The fill on demand may keep the level of precursor within the ampoule at a relatively constant level. The level may be calculated to result in an optimum head volume. The fill on demand may also keep the precursor at a temperature near that of an optimum precursor temperature. The fill on demand may occur during parts of the deposition process where the agitation of the precursor due to the filling of the ampoule with the precursor minimally effects the substrate deposition. Substrate throughput may be increased through the use of fill on demand.

Abstract: A temperature-controlled substrate support for a substrate processing system includes a substrate support located in the processing chamber. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one. A temperature sensor is located in one of the N zones. A controller is configured to calculate N resistances of the N resistive heaters during operation and to adjust power to N?1 of the N resistive heaters during operation of the substrate processing system in response to the temperature measured in the one of the N zones by the temperature sensor, the N resistances of the N resistive heaters, and N?1 resistance ratios.

Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: The present disclosure relates, in part, to an apparatus for controlling the concentration of a component within a gas mixture. In particular embodiments, the component is a vaporized liquid component, such as a vaporized stabilizer or a vaporized precursor. Also described are systems thereof and methods for such control.

Abstract: Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.

Abstract: A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

Abstract: A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.

Abstract: A method for performing a feedback sequence for patterning CD control. The method including performing a series of process steps on a wafer to obtain a plurality of features, wherein a process step is performed under a process condition. The method including measuring a dimension of the plurality of features after performing the series of process steps. The method including determining a difference between the dimension that is measured and a target dimension for the plurality of features. The method including modifying the process condition for the process step based on the difference and a sensitivity factor for the plurality of features relating change in dimension and change in process condition.

Abstract: A gas delivery system includes a 2-port valve including a first valve located between a first port and a second port. A 4-port valve includes a first node connected to a first port and a second port. A bypass path is located between the third port and the fourth port. A second node is located along the bypass path. A second valve is located between the first node and the second node. A manifold block defines gas flow channels configured to connect the first port of the 4-port valve to a first inlet, configured to connect the second port of the 4-port valve to the first port of the 2-port valve, the third port of the 4-port valve to a second inlet, the second port of the 2-port valve to a first outlet, and the fourth port of the 4-port valve to a second outlet.

Abstract: A baseplate for a substrate support includes a heater layer configured to selectively heat the baseplate and a heat spreader disposed between the heater layer and an upper surface of the baseplate. The heat spreader is configured to distribute heat provided by the heater layer throughout the baseplate. The baseplate includes a first material that has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material that has a second CTE and a second thermal conductivity greater than the first thermal conductivity.

Abstract: A purge baffle for a substrate support includes an annular ring configured to surround an outer perimeter around the substrate support in a volume below the substrate support and a first portion. The first portion includes a plenum defined below the first portion and outside of the annular ring in the volume below the substrate support and a plurality of openings that provide respective flow paths from a region above the first portion into the plenum. At least a first opening of the plurality of openings has a first conductance and at least a second opening of the plurality of openings has a second conductance that is different than the first conductance.

Abstract: A method for evacuating a volume below a substrate in a substrate processing system includes arranging the substrate on a lift mechanism of a substrate support to define the volume below the substrate between the substrate and an upper surface of the substrate support. An evacuation step is initiated to evacuate the volume below the substrate. The evacuation step includes pumping down the volume below the substrate at least one of through and around the lift mechanism. The lift mechanism is lowered during the evacuation step to position the substrate on the upper surface of the substrate support and the evacuation step is terminated.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

Abstract: A substrate processing system includes a substrate support and a controller. The substrate support includes a lift pad, a plurality of zones, and a plurality of resistive heaters arranged throughout the plurality of zones. The plurality of resistive heaters includes separately-controllable resistive heaters arranged in respective ones of the plurality of zones. The controller is configured to determine a rotational position of a substrate arranged on the lift pad, selectively rotate the lift pad to adjust the substrate to the rotational position, and control the plurality of resistive heaters to selectively adjust temperatures within the plurality of zones based on the rotational position.

Abstract: A system to process a semiconductor substrate includes a substrate support assembly configured to support the semiconductor substrate. The substrate support assembly includes M resistive heaters respectively arranged in M zones in a layer of the substrate support assembly, where M is an integer greater than 1. The layer is adjacent to the semiconductor substrate. The substrate support assembly includes N temperature sensors arranged at N locations in the layer, where N is an integer greater than 1 and less than or equal to M. The system further includes a controller configured to control one or more of the M resistive heaters based on a temperature sensed by one of the N temperature sensors and average temperatures of one or more of the M zones.

Abstract: Methods and apparatuses are provided herein for independently adjusting flowpath conductance. One multi-station processing apparatus may include a processing chamber, a plurality of process stations in the processing chamber that each include a showerhead having a gas inlet, and a gas delivery system including a junction point and a plurality of flowpaths, in which each flowpath includes a flow element, includes a temperature control unit that is thermally connected with the flow element and that is controllable to change the temperature of that flow element, and fluidically connects one corresponding gas inlet of a process station to the junction point such that each process station of the plurality of process stations is fluidically connected to the junction point by a different flowpath.

Abstract: A substrate processing system includes a processing chamber, a substrate support including a plurality of heater zones arranged in the processing chamber, a gas delivery system configured to deliver process gases to the processing chamber, and a controller configured to communicate with the gas delivery system and the plurality of heater zones, initiate a first treatment step of a process during a transient temperature period after a substrate is arranged on the substrate support and prior to the substrate reaching a steady-state temperature of the substrate support, and adjust heating to each of the plurality of heater zones during the first treatment step based on average heat functions determined for corresponding ones of the plurality of heater zones during a period corresponding to the first treatment step.

Abstract: A substrate processing system is provided and includes a substrate support, a memory, and calibration, operating parameter, and solving modules. The substrate support supports a substrate and includes temperature control elements. The memory stores, for the temperature control elements, temperature calibration values and sensitivity calibration values. The calibration module, during calibration of the temperature control elements, performs a first calibration process to determine the temperature calibration values or a second calibration process to determine the sensitivity calibration values. The sensitivity calibration values relate at least one of trim amounts or deposition amounts to temperature changes. The operating parameter module determines operating parameters for the temperature control elements based on the temperature and sensitivity calibration values.