Abstract: A method of operation of a semiconductor device that includes the steps of coupling each of a plurality of digital inputs to a corresponding row of non-volatile memory (NVM) cells that stores an individual weight, initiating a read operation based on a digital value of a first bit of the plurality of digital inputs, accumulating along a first bit-line coupling a first array column weighted bit-line current, in which the weighted bit-line current corresponds to a product of the individual weight stored therein and the digital value of the first bit, and converting and scaling, an accumulated weighted bit-line current of the first column, into a scaled charge of the first bit in relation to a significance of the first bit.

Abstract: In-memory computing architectures and methods of performing multiply-and-accumulate operations are provided. The method includes sequentially shifting bits of first input bytes into each row in an array of memory cells arranged in rows and columns. Each memory cell is activated based on the bit to produce a bit-line current from each activated memory cell in a column on a shared bit-line proportional to a product of the bit and a weight stored therein. Charges produced by a sum of the bit-line currents in a column are accumulated in first charge-storage banks coupled to a shared bit-line in each of the columns. Concurrently, charges from second input bytes accumulated in second charge-storage banks previously coupled to the columns are sequentially converted into output bytes. The charge-storage banks are exchanged after the first input bytes have been accumulated and the charges from the second input bytes converted. The method then repeats.

Abstract: In-memory computing architectures and methods of performing multiply-and-accumulate operations are provided. The method includes sequentially shifting bits of first input bytes into each row in an array of memory cells arranged in rows and columns. Each memory cell is activated based on the bit to produce a bit-line current from each activated memory cell in a column on a shared bit-line proportional to a product of the bit and a weight stored therein. Charges produced by a sum of the bit-line currents in a column are accumulated in first charge-storage banks coupled to a shared bit-line in each of the columns. Concurrently, charges from second input bytes accumulated in second charge-storage banks previously coupled to the columns are sequentially converted into output bytes. The charge-storage banks are exchanged after the first input bytes have been accumulated and the charges from the second input bytes converted. The method then repeats.

Abstract: An integrated circuit (IC) device can include at least one phase or delay lock loop (P/DLL) circuit comprising a plurality of circuit sections, at least one of the circuit sections responsive to digital calibration values to alter at least one periodic output signal; a nonvolatile memory (NVM) circuit formed in the same IC package as the at least one P/DLL circuit and configured to store the calibration values; and a processing circuit formed in the same IC package as the at least one P/DLL circuit and the NVM circuit, the processing circuit configured to generate the calibration values in response to target values and output values from the at least one P/DLL circuit, and to store the calibration values in the NVM circuit.

Abstract: A circuit containing a pair of charge pumps and an active filter receives outputs of a phase frequency detector used in a phase locked loop. The charge pump is implemented using switches and resistors to reduce performance variations due to component mismatches. The loop filter includes a resistor and a capacitor coupled in series, the resistor and the capacitor determining a zero of the transfer function of the loop filter. The charge pump circuit simultaneously injects a first current pulse at a first node of the loop filter and a second current pulse at a second node formed by a junction of the resistor and the capacitor. The polarity of the first current pulse is the opposite of the polarity of the second current pulse. Multiplication of the capacitance of the capacitor is thereby achieved, enabling implementation of the loop filter in integrated circuit form.

Abstract: A circuit containing a pair of charge pumps and an active filter receives outputs of a phase frequency detector used in a phase locked loop. The charge pump is implemented using switches and resistors to reduce performance variations due to component mismatches. The loop filter includes a resistor and a capacitor coupled in series, the resistor and the capacitor determining a zero of the transfer function of the loop filter. The charge pump circuit simultaneously injects a first current pulse at a first node of the loop filter and a second current pulse at a second node formed by a junction of the resistor and the capacitor. The polarity of the first current pulse is the opposite of the polarity of the second current pulse. Multiplication of the capacitance of the capacitor is thereby achieved, enabling implementation of the loop filter in integrated circuit form.