Abstract: An article having a protective coating for use in semiconductor applications and method for making the same is provided. In one embodiment, a method of coating an aluminum surface of an article utilized in a semiconductor deposition chamber includes the steps of heating a coating material to a semi-liquidous state, the coating material comprising at least one material from the group consisting of aluminum fluoride and magnesium fluoride and depositing the heated coating material on the aluminum surface. The protective coating has a beta phase grain orientation of less than about 10 percent that has good adhesion to aluminum and resists cracking, flaking and peeling. Some articles that may be advantageously coated include showerheads, blocker plates, support assemblies and vacuum chamber bodies, among others.

Abstract: An article having a protective coating for use in semiconductor applications and method for making the same is provided. In one embodiment, a method of coating an aluminum surface of an article utilized in a semiconductor deposition chamber includes the steps of heating a coating material to a semi-liquidous state, the coating material comprising at least one material from the group consisting of aluminum fluoride and magnesium fluoride and depositing the heated coating material on the aluminum surface. The protective coating has a beta phase grain orientation of less than about 10 percent that has good adhesion to aluminum and resists cracking, flaking and peeling. Some articles that may be advantageously coated include showerheads, blocker plates, support assemblies and vacuum chamber bodies, among others.

Abstract: The present invention provides an electrostatic chuck having a dielectric layer with improved porosity and electrical properties, and a method for fabricating the dielectric layer and applying the layer to a pedestal to form a portion of an electrostatic chuck. The dielectric layer is formed by a detonation gun process which includes igniting a fuel gas mixture to form a detonation wave and propelling aluminum oxide powder onto the pedestal at high speeds. The dielectric layer has a porosity of less than 1 percent of its total volume, which improves the electrical properties of the chuck, such as its dielectric strength and the dielectric constant. In addition, the low porosity decreases the adsorption of moisture and other gases into the dielectric layer, which further enhances the electrical properties of the chuck.

Abstract: A high temperature, oxidation resistant coating is provided for an RF antenna used in semiconductor processing. In a preferred embodiment, the coating is made of nickel to protect the antenna against oxidation at high temperatures.