Abstract: A power semiconductor device having high avalanche capability comprises an N+ doped substrate and, in sequence, N? doped, P? doped, and P+ doped semiconductor layers, the P? and P+ doped layers having a combined thickness of about 5 ?m to about 12 ?m. Recombination centers comprising noble metal impurities are disposed substantially in the N? and P? doped layers. A process for forming a power semiconductor device with high avalanche capability comprises: forming an N? doped epitaxial layer on an N+ doped substrate, forming a P? doped layer in the N? doped epitaxial layer, forming a P+ doped layer in the P? doped layer, and forming in the P? and N? doped layers recombination centers comprising noble metal impurities. The P+ and P?doped layers have a combined thickness of about 5 ?m to about 12 ?m.

Abstract: A power semiconductor device having high avalanche capability comprises an N+ doped substrate and, in sequence, N? doped, P? doped, and P+ doped semiconductor layers, the P? and P+ doped layers having a combined thickness of about 5 ?m to about 12 ?m. Recombination centers comprising noble metal impurities are disposed substantially in the N? and P? doped layers. A process for forming a power semiconductor device with high avalanche capability comprises: forming an N? doped epitaxial layer on an N+ doped substrate, forming a P? doped layer in the N? doped epitaxial layer, forming a P+ doped layer in the P? doped layer, and forming in the P? and N? doped layers recombination centers comprising noble metal impurities. The P+ and P? doped layers have a combined thickness of about 5 ?m to about 12 ?m.

Abstract: In an improved process for controlling and improving minority carrier lifetime in a P-i-N diode, platinum is deposited on a surface of a silicon semiconductor substrate containing at least one PN junction. The substrate is heated to a temperature of about 800° C., and the platinum is diffused into the substrate as its temperature is increased at a rate of about 5° C./minute to a first selected temperature of about 850-950° C. Platinum diffusion is continued while the substrate is maintained at the first selected temperature for about 30-60 minutes. The substrate temperature is then increased at a rate of about 5° C./minute to a second selected temperature above 950° C. to about 1000° C., and the substrate is maintained at the second selected temperature for about 5-30 minutes before cooling.