Abstract: A process for preparing a T-gate structure for use in applying a gate voltage in a field effect transistor, wherein the gate has a short foot portion in contact with the semiconductor substrate for a short gate length and consequent low capacitance, and a large amount of metal in a contact head portion for gate low resistance. An electron beam resist technique is used to define the foot and head profiles, and a dry etch technique is used to transfer the foot profile to a dielectric later overlying the substrate. Metal is deposited into the profile pattern thus defined to form the head and the foot, and excess metal is removed by lifting off the electron beam resist layer. The remaining elements of the field effect transistor are fabricated either before, in steps intermixed with, or after the T-gate is deposited.