Patents by Inventor Randall S. Mundt

Randall S. Mundt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
    Patent number: 4578128
    Abstract: A retrograde dopant distribution is provided in a semiconductor substrate by the combined use of indiffusion and surface outdiffusion and without the use of high energy implants or buried epitaxial layers. The retrograde dopant distribution is provided both in the n-well and the p-well regions to a depth sufficient to accommodate deep trench isolation structures.
    Type: Grant
    Filed: December 3, 1984
    Date of Patent: March 25, 1986
    Assignee: NCR Corporation
    Inventors: Randall S. Mundt, Ray E. Wyatt
  • Method for forming trench isolation structures
    Patent number: 4571819
    Abstract: A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.
    Type: Grant
    Filed: November 1, 1984
    Date of Patent: February 25, 1986
    Assignee: NCR Corporation
    Inventors: Steven H. Rogers, Randall S. Mundt, Denise A. Kaya
  • Plasma etching using improved electrode
    Patent number: 4297162
    Abstract: Radio frequency plasma etching of conductive coatings on semiconductor slices is improved by the use of a curved electrode which is closer to the slice at the center than at the periphery. Preferably, the electrode is in a symmetrical chamber which contains only one slice, and reactant gases are admitted through apertures in the electrode. An r.f. power source is connected between the electrode and a holder for the slice.
    Type: Grant
    Filed: October 17, 1979
    Date of Patent: October 27, 1981
    Assignee: Texas Instruments Incorporated
    Inventors: Randall S. Mundt, Timothy A. Wooldridge, Thomas O. Blasingame
  • Method of selective oxidation in manufacture of semiconductor devices
    Patent number: 4170492
    Abstract: A method of selectively enhancing the growth rate of silicon oxide in the manufacture of semiconductor devices results in a reduction in encroachment of oxide into the edges of areas masked by silicon nitride. Implanting an impurity material into the monocrystalline silicon surface, without annealling to correct implant damage, causes the surface to oxidize at lower temperatures and faster rates.
    Type: Grant
    Filed: April 18, 1978
    Date of Patent: October 9, 1979
    Assignee: Texas Instruments Incorporated
    Inventors: Keith G. Bartlett, Laurence R. Jordan, Randall S. Mundt