Abstract: Composition and method for depositing ruthenium. A composition containing ruthenium tetroxide RuO4 is used as a precursor solution 608 to coat substrates 400 via ALD, plasma enhanced deposition, and/or CVD. Periodic plasma densification may be used.

Abstract: A method and apparatus for decreasing deposition time of a thin film are disclosed. The apparatus includes a removable shield assembly disposed in a vacuum chamber. The shield assembly forms an enclosure to house a substrate during an ALD process. A gas line coupled to the shield assembly introduces a gas into the enclosure to form a thin film on a surface of the substrate. A final valve is associated with the gas line and located proximate the shield assembly such that placement of the final valve with respect to the shield assembly provides fast delivery of the gas into the enclosure.

Abstract: A nanolaminate thin film and a method for forming the same using atomic layer deposition are disclosed. The method includes forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate. A layer of silicon dioxide is formed on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.

Abstract: A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.

Abstract: An apparatus for fabricating a conformal thin film on a substrate are disclosed. The apparatus includes a top shield having a top surface and a bottom surface and a bottom shield having an aperture formed therein and a thickness. The bottom shield is coupled to the bottom surface of the top shield such that the top shield covers the aperture. The apparatus further includes a substrate holder that may hold a substrate. The substrate holder is in contact with the bottom shield such that a reaction chamber is formed having a volume defined by the aperture and the thickness of the bottom shield.

Abstract: A method and apparatus for fabricating a conformal thin film on a substrate are disclosed. The method includes introducing a gas from a gas inlet into an expansion volume associated with an atomic layer deposition (ALD) system. The gas is flowed through a diffuser plate adjacent to the expansion volume and a reaction chamber. The diffuser plate includes a protrusion located opposite the gas inlet and the protrusion reduces turbulence in the expansion volume.