Patents by Inventor Randolph D. Mah

Randolph D. Mah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing on resistance and improving current characteristics of a MOSFET
    Patent number: 5306656
    Abstract: Construction and operation method for lightly doped drain MOSFET that has low or minimum drift on-state resistance and maintains high voltage blocking in the off-state. Temperature sensitivity of the electrical properties of the MOSFET are also reduced relative to MOSFETs produced by processes such as SIPOS. Voltage level shifting of p-channel and n-channel MOSFETs, produced according to the invention, relative to another voltage level is easily accomplished.
    Type: Grant
    Filed: April 12, 1993
    Date of Patent: April 26, 1994
    Assignee: Siliconix incorporated
    Inventors: Richard K. Williams, Randolph D. Mah
  • Lightly doped drain MOSFET with reduced on-resistance
    Patent number: 5237193
    Abstract: Construction method and apparatus for lightly doped drain MOSFET that has low or minimum drift on-state resistance and maintains high voltage blocking in the off-state. Temperature sensitivity of the electrical properties of the MOSFET are also reduced relative to MOSFETs produced by processes such as SIPOS. Voltage level shifting of p-channel and n-channel MOSFETs, produced according to the invention, relative to another voltage level is easily accomplished.
    Type: Grant
    Filed: June 24, 1988
    Date of Patent: August 17, 1993
    Assignee: Siliconix Incorporated
    Inventors: Richard K. Williams, Randolph D. Mah