Patents by Inventor Ranee W. Kwong
Ranee W. Kwong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9040225Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.Type: GrantFiled: October 30, 2014Date of Patent: May 26, 2015Assignee: International Business Machines CorporationInventors: Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Ranee W. Kwong, Sen Liu
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Patent number: 9012133Abstract: An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.Type: GrantFiled: August 30, 2011Date of Patent: April 21, 2015Assignee: International Business Machines CorporationInventors: Javier J. Perez, Dario L. Goldfarb, Ranee W. Kwong, Libor Vyklicky
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Publication number: 20150050601Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.Type: ApplicationFiled: October 30, 2014Publication date: February 19, 2015Inventors: Kuang-Jung Chen, Steven J. Holmes, Wu-Song Huang, Ranee W. Kwong, Sen Liu
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Publication number: 20130052593Abstract: An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.Type: ApplicationFiled: August 30, 2011Publication date: February 28, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Javier J. Perez, Dario L. Goldfarb, Ranee W. Kwong, Libor Vyklicky
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Patent number: 8373271Abstract: An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material.Type: GrantFiled: May 27, 2010Date of Patent: February 12, 2013Assignee: International Business Machines CorporationInventors: Dario L. Goldfarb, Ranee W. Kwong, Qinghuang Lin, Deborah A. Neumayer, Hosadurga Shobha
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Publication number: 20110291284Abstract: An interconnect structure is provided that includes at least one patterned and cured photo-patternable low k material located on a surface of a patterned and cured oxygen-doped SiC antireflective coating (ARC). A conductively filled region is located within the at least one patterned and cured photo-patternable low k material and the patterned and cured oxygen-doped SiC ARC. The oxygen-doped SiC ARC, which is a thin layer (i.e., less than 400 angstroms), does not produce standing waves that may degrade the diffusion barrier and the electrically conductive feature that are embedded within the patterned and cured photo-patternable low k dielectric material and, as such, structural integrity is maintained. Furthermore, since a thin oxygen-doped SiC ARC is employed, the plasma etch process time used to open the material stack of the ARC/dielectric cap can be reduced, thus reducing potential plasma damage to the patterned and cured photo-patternable low k material.Type: ApplicationFiled: May 27, 2010Publication date: December 1, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dario L. Goldfarb, Ranee W. Kwong, Qinghuang Lin, Deborah A. Neumayer, Hosadurga Shobha
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Patent number: 6939664Abstract: Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.Type: GrantFiled: October 24, 2003Date of Patent: September 6, 2005Assignee: International Business Machines CorporationInventors: Wu-Song Huang, Robert D. Allen, Marie Angelopoulos, Ranee W. Kwong, Ratnam Sooriyakumaran
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Patent number: 6927015Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: GrantFiled: August 18, 2004Date of Patent: August 9, 2005Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Patent number: 6821718Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.Type: GrantFiled: September 9, 2003Date of Patent: November 23, 2004Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Patent number: 6818381Abstract: Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.Type: GrantFiled: December 21, 2001Date of Patent: November 16, 2004Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Timothy M. Hughes, Ranee W. Kwong, Pushkara Rao Varanasi, William R. Brunsvold, Margaret C. Lawson, Robert D. Allen, David R. Medeiros, Ratnam Sooriyakumaran, Phillip Brock
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Patent number: 6770419Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.Type: GrantFiled: September 11, 2002Date of Patent: August 3, 2004Assignee: International Business Machines CorporationInventors: Mahmoud M. Khojasteh, Ranee W. Kwong, Kuang-Jung Chen, Pushkara Rao Varanasi, Robert D. Allen, Phillip Brock, Frances Houle, Ratnam Sooriyakumaran
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Publication number: 20040048204Abstract: A negative resist composition, comprising:Type: ApplicationFiled: September 9, 2003Publication date: March 11, 2004Applicant: International Business MachinesInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Publication number: 20040048187Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.Type: ApplicationFiled: September 11, 2002Publication date: March 11, 2004Inventors: Mahmoud M. Khojasteh, Ranee W. Kwong, Kuang-Jung Chen, Pushkara Rao Varanasi, Robert D. Allen, Phillip Brock, Frances Houle, Ratnam Sooriyakumaran
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Patent number: 6689540Abstract: Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: GrantFiled: January 9, 2002Date of Patent: February 10, 2004Assignee: International Business Machines CorporationInventors: Ari Aviram, C. Richard Guarnieri, Wu-Song Huang, Ranee W. Kwong, David R. Medeiros
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Patent number: 6653045Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.Type: GrantFiled: February 16, 2001Date of Patent: November 25, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Patent number: 6586156Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.Type: GrantFiled: July 17, 2001Date of Patent: July 1, 2003Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Wu-Song Huang, Dai Junyan, Ranee W. Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau, Karen E. Petrillo
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Publication number: 20030049561Abstract: A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for lithographic treatment of a substrate by means of ketal/phenolic/silicon based compositions and corresponding processes for the production of an object, particularly an electronic component are provided.Type: ApplicationFiled: July 17, 2001Publication date: March 13, 2003Applicant: International Business Machines CorporationInventors: Marie Angelopoulos, Wu-Song Huang, Dai Junyan, Ranee W. Kwong, Robert N. Lang, Arpan P. Mahorowala, David R. Medeiros, Wayne M. Moreau, Karen E. Petrillo
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Patent number: 6458907Abstract: Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.Type: GrantFiled: October 3, 2000Date of Patent: October 1, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, C. Richard Guarnieri, Ranee W. Kwong
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Publication number: 20020115017Abstract: A negative resist composition, comprising:Type: ApplicationFiled: February 16, 2001Publication date: August 22, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Marie Angelopoulos, Ari Aviram, Wu-Song Huang, Ranee W. Kwong, Robert N. Lang, Qinghuang Lin, Wayne M. Moreau
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Patent number: 6436605Abstract: The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.Type: GrantFiled: July 12, 1999Date of Patent: August 20, 2002Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Ari Aviram, Edward D. Babich, Timothy Allan Brunner, Thomas Benjamin Faure, C. Richard Guarnieri, Ranee W. Kwong, Karen E. Petrillo