Patents by Inventor Ranjan Khurana
Ranjan Khurana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9741580Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.Type: GrantFiled: March 31, 2015Date of Patent: August 22, 2017Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Anton J. deVilliers, William R. Brown, Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
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Patent number: 9583381Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of a second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.Type: GrantFiled: June 14, 2013Date of Patent: February 28, 2017Assignee: Micron Technology, Inc.Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
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Patent number: 9460998Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.Type: GrantFiled: April 23, 2014Date of Patent: October 4, 2016Assignee: Micron Technology, Inc.Inventors: Justin B. Dorhout, Ranjan Khurana, David Swindler, Jianming Zhou
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Patent number: 9229328Abstract: A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.Type: GrantFiled: May 2, 2013Date of Patent: January 5, 2016Assignee: Micron Technology, Inc.Inventors: Ranjan Khurana, Gurpreet S. Lugani, Dan B. Millward
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Publication number: 20150206760Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.Type: ApplicationFiled: March 31, 2015Publication date: July 23, 2015Inventors: Vishal Sipani, Anton J. deVilliers, William R. Brown, Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
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Patent number: 8999852Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.Type: GrantFiled: December 12, 2012Date of Patent: April 7, 2015Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Anton J. deVillers, William R. Brown, Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
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Patent number: 8937018Abstract: A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.Type: GrantFiled: March 6, 2013Date of Patent: January 20, 2015Assignee: Micron Technology, Inc.Inventors: Vishal Sipani, Anton J. deVillers, Ranjan Khurana
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Publication number: 20140370684Abstract: Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material.Type: ApplicationFiled: June 14, 2013Publication date: December 18, 2014Inventors: Ranjan Khurana, Michael Hyatt, Scott L. Light, Kevin J. Torek, Anton J. deVilliers
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Patent number: 8889558Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.Type: GrantFiled: December 12, 2012Date of Patent: November 18, 2014Assignee: Micron Technology, Inc.Inventors: Ranjan Khurana, Anton J. deVillers, Kevin J. Torek, Shane J. Trapp, Scott L. Light, James M. Buntin
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Patent number: 8889559Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.Type: GrantFiled: December 12, 2012Date of Patent: November 18, 2014Assignee: Micron Technology, Inc.Inventors: Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
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Publication number: 20140329179Abstract: A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.Type: ApplicationFiled: May 2, 2013Publication date: November 6, 2014Applicant: Micron Technology, Inc.Inventors: Ranjan Khurana, Gurpreet S. Lugani, Dan B. Millward
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Publication number: 20140256140Abstract: A method of forming a pattern on a substrate includes forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Photoresist is formed elevationally over and laterally inward of the cylinder-like structures. The photoresist is patterned to form interstitial spaces into the photoresist laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by at least three of the cylinder-like structures. The patterned photoresist is used as an etch mask while etching interstitial openings into the base and while the photoresist is laterally inward of the cylinder-like structures. Other aspects are disclosed.Type: ApplicationFiled: March 6, 2013Publication date: September 11, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishal Sipani, Anton J. deVillers, Ranjan Khurana
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Publication number: 20140232008Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.Type: ApplicationFiled: April 23, 2014Publication date: August 21, 2014Applicant: Micron Technology, Inc.Inventors: Justin B. Dorhout, Ranjan Khurana, David Swindler, Jianming Zhou
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Patent number: 8796086Abstract: A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.Type: GrantFiled: October 15, 2013Date of Patent: August 5, 2014Assignee: Micron Technology, Inc.Inventors: Neal L. Davis, Richard T. Housley, Ranjan Khurana
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Publication number: 20140162459Abstract: A method of forming a pattern on a substrate includes forming spaced first material-comprising pillars projecting elevationally outward of first openings formed in second material. Sidewall spacers are formed over sidewalls of the first material-comprising pillars. The sidewall spacers form interstitial spaces laterally outward of the first material-comprising pillars. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall spacers that are over sidewalls of four of the first material-comprising pillars.Type: ApplicationFiled: December 12, 2012Publication date: June 12, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
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Publication number: 20140162457Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.Type: ApplicationFiled: December 12, 2012Publication date: June 12, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Vishal Sipani, Anton J. deVillers, William R. Brown, Shane J. Trapp, Ranjan Khurana, Kevin R. Shea
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Publication number: 20140162458Abstract: A method of forming a pattern on a substrate includes forming openings in material of a substrate. The openings are widened to join with immediately adjacent of the openings to form spaced pillars comprising the material after the widening. Other embodiments are disclosed.Type: ApplicationFiled: December 12, 2012Publication date: June 12, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Ranjan Khurana, Anton J. DeVillers, Kevin J. Torek, Shane J. Trapp, Scott L. Light, James M. Buntin
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Patent number: 8741781Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.Type: GrantFiled: June 21, 2012Date of Patent: June 3, 2014Assignee: Micron Technology, Inc.Inventors: Justin B. Dorhout, Ranjan Khurana, David Swindler, Jianming Zhou
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Publication number: 20140045317Abstract: A method of forming a series of spaced trenches into a substrate includes forming a plurality of spaced lines over a substrate. Anisotropically etched sidewall spacers are formed on opposing sides of the spaced lines. Individual of the lines have greater maximum width than minimum width of space between immediately adjacent of the spacers between immediately adjacent of the lines. The spaced lines are removed to form a series of alternating first and second mask openings between the spacers. The first mask openings are located where the spaced lines were located and are wider than the second mask openings. Alternating first and second trenches are simultaneously etched into the substrate through the alternating first and second mask openings, respectively, to form the first trenches to be wider and deeper within the substrate than are the second trenches. Other implementations and embodiments are disclosed.Type: ApplicationFiled: October 15, 2013Publication date: February 13, 2014Applicant: Micron Technology, Inc.Inventors: Neal L. Davis, Richard T. Housley, Ranjan Khurana
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Publication number: 20130341795Abstract: Some embodiments include a semiconductor construction having a pair of lines extending primarily along a first direction, and having a pair of contacts between the lines. The contacts are spaced from one another by a lithographic dimension, and are spaced from the lines by sub-lithographic dimensions. Some embodiments include a method of forming a semiconductor construction. Features are formed over a base. Each feature has a first type sidewall and a second type sidewall. The features are spaced from one another by gaps. Some of the gaps are first type gaps between first type sidewalls, and others of the gaps are second type gaps between second type sidewalls. Masking material is formed to selectively fill the first type gaps relative to the second type gaps. Excess masking material is removed to leave a patterned mask. A pattern is transferred from the patterned mask into the base.Type: ApplicationFiled: June 21, 2012Publication date: December 26, 2013Applicant: MICRON TECHNOLOGY, INC.Inventors: Justin B. Dorhout, Ranjan Khurana, David Swindler, Jianming Zhou