Patents by Inventor Rankyung Jung

Rankyung Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11768432
    Abstract: A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: September 26, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-Ho Yun, Soo Kyung Kim, Jaikyun Park, Donghoon Lee, Rankyung Jung, Soonmok Ha
  • Publication number: 20220091497
    Abstract: A reflective mask includes a central region and first and second peripheral regions at opposite sides of the central region, respectively, the first peripheral region including a first out-of-band region having a first edge region extending in a first direction, and a first expansion region between the first edge region and the central region, and a first outer auxiliary region adjacent to the first expansion region of the first out-of-band region in the first direction, the first outer auxiliary region having a first auxiliary pattern region.
    Type: Application
    Filed: August 20, 2021
    Publication date: March 24, 2022
    Inventors: Sang-Ho YUN, Soo Kyung KIM, Jaikyun PARK, Donghoon LEE, Rankyung JUNG, Soonmok HA
  • Patent number: 9704721
    Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: July 11, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyunchang Lee, Boo-Hyun Ham, Yongkug Bae, Ja-Min Koo, Jonghwa Baek, Heeju Shin, Rankyung Jung
  • Publication number: 20160155662
    Abstract: Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.
    Type: Application
    Filed: November 17, 2015
    Publication date: June 2, 2016
    Inventors: Hyunchang LEE, Boo-Hyun Ham, Yongkug Bae, Ja-Min Koo, Jonghwa Baek, Heeju Shin, Rankyung Jung