Abstract: A passivation process includes the successive steps of a) providing a stack having, in succession, a substrate based on crystalline silicon, a layer of silicon oxide, and at least one layer of transparent conductive oxide; and b) applying a hydrogen-containing plasma to the stack, step b) being executed at a suitable temperature so that hydrogen atoms of the hydrogen-containing plasma diffuse to the interface between the substrate and the layer of silicon oxide.

Abstract: A passivation process includes the successive steps of a) providing a stack having, in succession, a substrate based on crystalline silicon, a layer of silicon oxide, and at least one layer of transparent conductive oxide; and b) applying a hydrogen-containing plasma to the stack, step b) being executed at a suitable temperature so that hydrogen atoms of the hydrogen-containing plasma diffuse to the interface between the substrate and the layer of silicon oxide.

Abstract: The invention relates to a method for obtaining a metal contact on a substrate, comprising the following steps: (a) depositing a metal pattern in the form of a paste formed from a mixture of a metal power and a solvent, (b) heating the assembly formed in step (a) in order to evaporate the solvent, and (c) annealing same in order to form a metal contact between the metal pattern and the substrate. The invention is characterised in that it also includes a step (d) in which the metal contact is heated by laser at an energy density of between 0.5 J/cm2 and 15 J/cm2.

Abstract: The photovoltaic cell includes an electrically conductive passivation film separated from an electrically conductive collection layer and a substrate. An electrically conductive connection pattern maintains an area of the collection layer in suspension with respect to the passivation film. Suspension of the collection layer is obtained by making an etching agent pass through a permeable area of the collection layer.