Abstract: A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.

Abstract: The present disclosure relates to methods of forming a film including small molecules. Such methods can optionally include removing such small molecules, such as by way of sublimation, evaporation, or conversion to a more volatile form.

Abstract: A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.

Abstract: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

Abstract: A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatize the sacrificial bracing material.

Abstract: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching fluid and/or wet cleaning fluid, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The plurality of HAR structures are exposed to non-plasma based stimuli to remove the bracing material.

Abstract: A method includes depositing a film solution onto a patterned feature of a semiconductor substrate after wet cleaning the semiconductor substrate and without performing a drying step after the wet cleaning. The film solution includes a dielectric film precursor or a dielectric film precursor and at least one of a reactant, a solvent, a surfactant and a carrier fluid. The method includes baking at least one of solvent and unreacted solution out of a film formed by the film solution by heating the substrate to a baking temperature. The method includes curing the substrate.

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.