Patents by Inventor Ratnaji R. Kola

Ratnaji R. Kola has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5620573
    Abstract: X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low and uniform stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited. The stress gradients in the film are further reduced by transferring heat from the membrane as the metal is deposited thereon.
    Type: Grant
    Filed: April 28, 1995
    Date of Patent: April 15, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Charles W. Jurgensen, Ratnaji R. Kola, Gabriel L. Miller, Henry I. Smith, Eric R. Wagner
  • Patent number: 5482802
    Abstract: The present invention provides a process for locally removing at least a portion of a material layer structure in which first and second materials are provided, the second material having a higher etch rate by an activated reaction gas than the first material. The second material is disposed over at least a portion of the first material. A reaction gas flows adjacent a portion of the second material to be removed. The reaction gas is chemically reactive with at least the second material to form volatile reaction products when activated by a focused particle beam, but does not spontaneously react with the second material.The portion of the second material to be removed is irradiated with a focused particle beam. Exemplary particle beams are focused ion beams and electron beams. The focused particle beam initiates a chemical reaction between the portion of the second material and the reaction gas, forming volatile reaction products which desorb from the substrate and are removed.
    Type: Grant
    Filed: November 24, 1993
    Date of Patent: January 9, 1996
    Assignee: AT&T Corp.
    Inventors: George K. Celler, Lloyd R. Harriott, Ratnaji R. Kola
  • Patent number: 5480529
    Abstract: X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.
    Type: Grant
    Filed: November 16, 1994
    Date of Patent: January 2, 1996
    Assignee: AT&T Corp.
    Inventors: Ratnaji R. Kola, Gabriel L. Miller, Eric R. Wagner
  • Patent number: 5382340
    Abstract: X-ray masks are typically made by depositing and patterning a layer of heavy metal on a thin supporting membrane. The metal layer must have a relatively low stress to prevent stress-induced deformation of the pattern. Tungsten films having excellent stress characteristics are produced by employing a continuously operating capacitance-based measurement technique to allow adjustment of the deposition conditions in rapid response to changes in stress of the film being deposited.
    Type: Grant
    Filed: December 14, 1993
    Date of Patent: January 17, 1995
    Assignee: AT&T Corp.
    Inventors: Ratnaji R. Kola, Gabriel L. Miller, Eric R. Wagner