Patents by Inventor Raul AMIRPOUR

Raul AMIRPOUR has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11611003
    Abstract: A semiconductor component, in particular for a varactor, having at least one first semiconductor layer and a second semiconductor layer. At least two identical surface electrodes are arranged directly or indirectly on the second semiconductor layer facing away from the first semiconductor layer in order to form two anti-serially connected diodes. The surface electrodes are arranged in an interacting manner such that a load carrier zone which forms the common counter electrode for the surface electrodes is arranged in the first semiconductor layer at least in the operating state, and at least one control contact for controlling the potential of the load carrier zone is provided in a region of the load carrier zone on the second semiconductor layer face facing away from the first semiconductor layer.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: March 21, 2023
    Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventor: Raul Amirpour
  • Publication number: 20200287061
    Abstract: A semiconductor component, in particular for a varactor, having at least one first semiconductor layer and a second semiconductor layer. At least two identical surface electrodes are arranged directly or indirectly on the second semiconductor layer facing away from the first semiconductor layer in order to form two anti-serially connected diodes. The surface electrodes are arranged in an interacting manner such that a load carrier zone which forms the common counter electrode for the surface electrodes is arranged in the first semiconductor layer at least in the operating state, and at least one control contact for controlling the potential of the load carrier zone is provided in a region of the load carrier zone on the second semiconductor layer face facing away from the first semiconductor layer.
    Type: Application
    Filed: October 22, 2018
    Publication date: September 10, 2020
    Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
    Inventor: Raul AMIRPOUR