Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: Embodiments herein describe disposing a waveguide adapter onto an SOI device after the components on a silicon surface layer have been formed. That is, the waveguide adapter is disposed above optical components (e.g., optical modulators, detectors, waveguides, etc) formed in a surface layer. In one embodiment, a waveguide in a bottom layer of the waveguide adapter overlaps a silicon waveguide in the surface layer such that the silicon waveguide and the waveguide in the bottom layer are optically coupled. The waveguide adapter also includes other layers above the bottom layer (e.g., middle and top layers) that also contain waveguides which form an adiabatic optical system for transmitting an optical signal. At least one of the waveguides in the multi-layer adapter is exposed at an optical interface of the SOI device, thereby permitting the SOI device to transmit optical signals to, or receive optical signals from, an external optical component.

Abstract: Embodiments disclosed herein generally relate to a method for manufacturing a photonic device that facilitates precise alignment of a laser with a waveguide. The method generally includes disposing the laser on a support member on a substrate such that the laser contacts the support member. The support member may extend in a direction perpendicular to a base plane of the substrate, and solder may be disposed on the base plane such that a height of the solder in the direction perpendicular to the base plane is less than a height of the support member so that a gap is created between the solder and the laser. Once the laser has been properly aligned with the waveguide, the solder may be heated (e.g., reflowed) so that the solder contacts the laser.

Abstract: Embodiments herein describe disposing a waveguide adapter onto an SOI device after the components on a silicon surface layer have been formed. That is, the waveguide adapter is disposed above optical components (e.g., optical modulators, detectors, waveguides, etc) formed in a surface layer. In one embodiment, a waveguide in a bottom layer of the waveguide adapter overlaps a silicon waveguide in the surface layer such that the silicon waveguide and the waveguide in the bottom layer are optically coupled. The waveguide adapter also includes other layers above the bottom layer (e.g., middle and top layers) that also contain waveguides which form an adiabatic optical system for transmitting an optical signal. At least one of the waveguides in the multi-layer adapter is exposed at an optical interface of the SOI device, thereby permitting the SOI device to transmit optical signals to, or receive optical signals from, an external optical component.

Abstract: An optical coupler may include a fiber optic structure that has a portion of an outer surface that extends in a longitudinal direction of the fiber optic structure. The longitudinal outer surface portion may be optically coupled with a waveguide core of an optical integrated circuit. The fiber optic structure may also include a second outer surface that extends transverse to the longitudinal direction of the fiber optic structure. The fiber optic structure may also include a third outer surface portion that is butt coupled to an end of an optical fiber to optically couple the third outer surface portion with the optical fiber.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

Abstract: Embodiments disclosed herein generally relate to optical couplers for transmitting an optical signal between a waveguide in an optical device to an external light-carrying medium and vice versa. The couplers include first and second portions that extend away from the waveguide towards an optical interface that faces the light-carrying medium. The first portion is attached to the waveguide, while the second portion is not. In one example, a first end of the first portion is attached to the waveguide, while a second end, opposite the first end, faces the optical interface. The first portion may taper as it extends from the first end to the second. The second portion of the coupler may be physically separated from both the first portion and the waveguide. However, in one embodiment, the first and second portions extend in the same direction towards the optical interface.

Abstract: An optical coupler may include a fiber optic structure that has a portion of an outer surface that is beveled at a predetermined angle relative to a longitudinal axis of the fiber optic structure. The beveled outer surface portion may be optically coupled with a waveguide core of an optical integrated circuit. The fiber optic structure may also include a second outer surface portion that is butt coupled to an end of an optical fiber to optically couple the second outer surface portion with the optical fiber.

Abstract: An optical coupler may include a fiber optic structure that has a portion of an outer surface that is beveled at a predetermined angle relative to a longitudinal axis of the fiber optic structure. The beveled outer surface portion may be optically coupled with a waveguide core of an optical integrated circuit. The fiber optic structure may also include a second outer surface portion that is butt coupled to an end of an optical fiber to optically couple the second outer surface portion with the optical fiber.

Abstract: Embodiments of the present disclosure include devices that split a light beam into two separate paths, with reduced sensitivity to fabrication variation. The devices can operate as 3-dB splitters that divide the input optical energy equally between two output waveguides. Similarly, the devices can also function to combine two light beams into a single path (coupler). The designs make use of adiabatic modal evolution and do not require physical symmetry along the entire device length.

Abstract: An optical coupler may include a fiber optic structure that has a portion of an outer surface that is beveled at a predetermined angle relative to a longitudinal axis of the fiber optic structure. The beveled outer surface portion may be optically coupled with a waveguide core of an optical integrated circuit. The fiber optic structure may also include a second outer surface portion that is butt coupled to an end of an optical fiber to optically couple the second outer surface portion with the optical fiber.

Abstract: An optical coupler may include a fiber optic structure that has a portion of an outer surface that is beveled at a predetermined angle relative to a longitudinal axis of the fiber optic structure. The beveled outer surface portion may be optically coupled with a waveguide core of an optical integrated circuit. The fiber optic structure may also include a second outer surface portion that is butt coupled to an end of an optical fiber to optically couple the second outer surface portion with the optical fiber.

Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.