Patents by Inventor Ravindra Naik BUKKE

Ravindra Naik BUKKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11664461
    Abstract: The present disclosure discloses an oxide semiconductor thin-film transistor and a method of fabricating the same. According to one embodiment of the present disclosure, the oxide semiconductor thin-film transistor includes a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, and source and drain electrodes. Since the gate insulating layer is formed of at least one of zirconium oxide (ZrOx) and lanthanum zirconium oxide (LaZrOx), the electrical characteristics of the oxide semiconductor thin-film transistor may be controlled by the gate insulating layer.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: May 30, 2023
    Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin Jang, Md Mobaidul Islam, Ravindra Naik Bukke
  • Publication number: 20220123147
    Abstract: The present disclosure discloses an oxide semiconductor thin-film transistor and a method of fabricating the same. According to one embodiment of the present disclosure, the oxide semiconductor thin-film transistor includes a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, and source and drain electrodes. Since the gate insulating layer is formed of at least one of zirconium oxide (ZrOx) and lanthanum zirconium oxide (LaZrOx), the electrical characteristics of the oxide semiconductor thin-film transistor may be controlled by the gate insulating layer.
    Type: Application
    Filed: April 23, 2021
    Publication date: April 21, 2022
    Applicant: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin JANG, Md Mobaidul ISLAM, Ravindra Naik BUKKE