Patents by Inventor Raviv YOHANAN
Raviv YOHANAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11862524Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: GrantFiled: September 28, 2021Date of Patent: January 2, 2024Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20230324810Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: June 1, 2023Publication date: October 12, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11720031Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: GrantFiled: September 28, 2021Date of Patent: August 8, 2023Assignee: KLA CorporationInventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11703767Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: GrantFiled: September 28, 2021Date of Patent: July 18, 2023Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feier, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413394Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220413395Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Publication number: 20220415725Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.Type: ApplicationFiled: September 28, 2021Publication date: December 29, 2022Inventors: Inna Steely-Tarshish, Stefan Eyring, Mark Ghinovker, Yoel Feler, Eitan Hajaj, Ulrich Pohlmann, Nadav Gutman, Chris Steely, Raviv Yohanan, Ira Naot
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Patent number: 11532566Abstract: A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.Type: GrantFiled: June 25, 2020Date of Patent: December 20, 2022Assignee: KLA CORPORATIONInventors: Roie Volkovich, Liran Yerushalmi, Raviv Yohanan, Mark Ghinovker
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Publication number: 20220291143Abstract: An optical metrology tool may include one or more illumination sources to generate illumination having wavelengths both within a short-wave infrared (SWIR) spectral range and outside the SWIR spectral range, illumination optics configured to direct the illumination to a sample, a first imaging channel including a first detector configured to image the sample based on a first wavelength range including at least some wavelengths in the SWIR spectral range, a second imaging channel including a second detector configured to image the sample based on a second wavelength range including at least some wavelengths outside the SWIR spectral range, and a controller. The controller may receive first images of the sample from the first detector, receive second images of the sample from the second detector, and generate an optical metrology measurement of the sample based on the first and second images.Type: ApplicationFiled: April 29, 2021Publication date: September 15, 2022Inventors: Amnon Manassen, Isaac Salib, Raviv YOHANAN, Diana Shaphirov, Eitan Hajaj, Vladimir Levinski, Avi Abramov, Michael Shentcis, Ariel Hildesheim, Yoav Grauer, Shlomo Eisenbach, Etay Lavert, Iftach Nir
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Patent number: 11353493Abstract: A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch, using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuringType: GrantFiled: July 10, 2019Date of Patent: June 7, 2022Assignee: KLA-TENCOR CORPORATIONInventors: Shlomit Katz, Roie Volkovich, Anna Golotsvan, Raviv Yohanan
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Patent number: 11355375Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.Type: GrantFiled: July 16, 2020Date of Patent: June 7, 2022Assignee: KLA CorporationInventors: Roie Volkovich, Liran Yerushalmi, Raviv Yohanan, Mark Ghinovker
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Publication number: 20220020625Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.Type: ApplicationFiled: July 16, 2020Publication date: January 20, 2022Inventors: Roie Volkovich, Liran Yerushalmi, Raviv Yohanan, Mark Ghinovker
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Publication number: 20220013468Abstract: A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.Type: ApplicationFiled: June 25, 2020Publication date: January 13, 2022Inventors: Roie Volkovich, Liran Yerushalmi, Raviv Yohanan, Mark Ghinovker
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Patent number: 11067904Abstract: Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.Type: GrantFiled: April 29, 2019Date of Patent: July 20, 2021Assignee: KLA CorporationInventors: Eran Amit, Raviv Yohanan
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Publication number: 20210011073Abstract: A data-driven misregistration parameter configuration and measurement system and method including simulating a plurality of measurement simulations of at least one multilayered semiconductor device, selected from a batch of multilayered semiconductor devices intended to be identical, using sets of measurement parameter configurations, generating simulation data for the device, identifying recommended measurement parameter configurations, selected from sets of measurement parameter configurations, providing a multilayered semiconductor device selected from the batch, providing the at least one recommended set of measurement parameter configurations to a misregistration metrology tool having multiple possible sets of measurement parameter configurations, measuring at least one multilayered semiconductor device, selected from the batch using the recommended set, thereby generating measurement data for the device, thereafter identifying a final recommended set of measurement parameter configurations and measuringType: ApplicationFiled: July 10, 2019Publication date: January 14, 2021Inventors: Shlomit Katz, Roie Volkovich, Anna Golotsvan, Raviv Yohanan
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Patent number: 10527951Abstract: Imaging metrology targets and methods are provided, which combine one-dimensional (1D) elements designed to provide 1D imaging metrology signals along at least two measurement directions and two-dimensional (2D) elements designed to provide at least one 2D imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possibly multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. Two dimensional elements may be designed to be periodic to provide additional one dimensional metrology signals.Type: GrantFiled: March 1, 2016Date of Patent: January 7, 2020Assignee: KLA-Tencor CorporationInventors: Raviv Yohanan, Eran Amit, Mark Ghinovker, Tal Itzkovich, Nuriel Amir
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Patent number: 10401841Abstract: Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.Type: GrantFiled: September 28, 2015Date of Patent: September 3, 2019Assignee: KLA-Tencor CorporationInventors: Roie Volkovich, Eran Amit, Raviv Yohanan
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Publication number: 20190250521Abstract: Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.Type: ApplicationFiled: April 29, 2019Publication date: August 15, 2019Inventors: Eran Amit, Raviv YOHANAN
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Patent number: 10303835Abstract: Target designs methods and targets are provided, in which at least some of the differentiation between target elements and their background is carried out by segmenting either of them. Directed self-assembly (DSA) processes are used to generate fine segmentation, and various characteristics of the polymer lines and their guiding lines are used to differentiate target elements from their background. Target designs and design principles are disclosed in relation to the DSA process, as well as optimization of the DSA process to yield high metrology measurement accuracy in face of production inaccuracies. Furthermore, designs and methods are provided for enhancing and using ordered regions of a DSA-produced polymer surface as target elements and as hard masks for production processes. The targets and methods may be configured to enable metrology measurements using polarized light to distinguish target elements or DSA features.Type: GrantFiled: May 12, 2015Date of Patent: May 28, 2019Assignee: KLA-Tencor CorporationInventors: Eran Amit, Raviv Yohanan, Tal Itzkovich, Nuriel Amir, Roie Volkovich, Dongsub Choi
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Patent number: 10274837Abstract: Metrology targets, design files, and design and production methods thereof are provided. The targets comprise two or more parallel periodic structures at respective layers, wherein a predetermined offset is introduced between the periodic structures, for example, opposite offsets at different parts of a target. Quality metrics are designed to estimate the unintentional overlay from measurements of a same metrology parameter by two or more alternative measurement algorithms. Target parameters are configured to enable both imaging and scatterometry measurements and enhance the metrology measurements by the use of both methods on the same targets. Imaging and scatterometry target parts may share elements or have common element dimensions. Imaging and scatterometry target parts may be combined into a single target area or may be integrated into a hybrid target using a specified geometric arrangement.Type: GrantFiled: February 12, 2015Date of Patent: April 30, 2019Assignee: KLA-Tencor CorporationInventors: Eran Amit, Raviv Yohanan