Patents by Inventor Raymond A. Zuhr

Raymond A. Zuhr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and method for selective area deposition of thin films on electrically biased substrates
    Patent number: 5910220
    Abstract: An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.
    Type: Grant
    Filed: August 5, 1994
    Date of Patent: June 8, 1999
    Assignee: Martin Marietta Energy Systems, Inc.
    Inventors: Raymond A. Zuhr, Tony E. Haynes, Andrzej Golanski
  • Apparatus and method for selective area deposition of thin films on electrically biased substrates
    Patent number: 5354583
    Abstract: An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.
    Type: Grant
    Filed: November 9, 1992
    Date of Patent: October 11, 1994
    Assignee: Martin Marietta Energy Systems, Inc.
    Inventors: Raymond A. Zuhr, Tony E. Haynes, Andrzej Golanski
  • Method for forming metallic silicide films on silicon substrates by ion beam deposition
    Patent number: 4908334
    Abstract: Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.
    Type: Grant
    Filed: January 24, 1989
    Date of Patent: March 13, 1990
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Raymond A. Zuhr, Orin W. Holland