Abstract: The proportional control valve for a fuel pump has a metering assembly within a tightly fit bore and a vent valve. The metering assembly includes a metering piston assembly, a piston biasing spring, an armature and a vent valve. The vent valve, such as a ball, is affixed to the armature and the metering piston assembly is configured around the vent valve in a manner that couples the metering piston to the armature. The metering piston assembly comprises a metering piston and a vent valve seat, permanently joined together, which contain a seal and a seat surface respectively between which the vent valve is permitted to move during the operation of the proportional control valve.

Abstract: The proportional control valve for a fuel pump has a metering assembly within a tightly fit bore and a vent valve. The metering assembly includes a metering piston assembly, a piston biasing spring, an armature and a vent valve. The vent valve, such as a ball, is affixed to the armature and the metering piston assembly is configured around the vent valve in a manner that couples the metering piston to the armature. The metering piston assembly comprises a metering piston and a vent valve seat, permanently joined together, which contain a seal and a seat surface respectively between which the vent valve is permitted to move during the operation of the proportional control valve.

Abstract: A method of manufacturing a transistor (400), the method comprising forming a gate (101) on a substrate (102), forming a spacer (201) on lateral side walls of the gate (101) and on an adjacent portion (202) of the substrate (102), rearranging material of the spacer (201) so that the rearranged spacer (301) covers only a lower portion (303) of the lateral side walls of the gate (101) and an increased portion (302) of the substrate (102), and providing source/drain regions (402, 403) in a portion of the substrate (102) below the rearranged spacer (301).

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a field effect transistor, in which method a semiconductor body (1) of silicon is provided at a surface thereof with a source region (2) and a drain region (3) of a first conductivity type, which both are provided with extensions (2A,3A) and with a channel region (4) of a second conductivity type, opposite to the first conductivity type, between the source region (2) and the drain region (3) and with a gate region (5) separated from the surface of the semiconductor body (1) by a gate dielectric (6) above the channel region (4), and wherein a pocket region (7) of the second conductivity type and with a doping concentration higher than the doping concentration of the channel region (4) is formed below the extensions (2A,3A), and wherein the pocket region (7) is formed by implanting heavy ions in the semiconductor body (1), after which implantation a first annealing process is done at a moderate temperature and a second annealing