Abstract: Wafers to be processed are mounted to a lapping plate of a lapping machine using a photosensitive thermoplastic material, such as a photoresist. In a preferred embodiment, the wafers are laminated to a dry film photopolymer disposed on a carrier sheet, after which the sheet is secured to the lapping plate using a pressed-fit hoop that stretches the carrier sheet across the surface of the lapping plate and holds the sheet secure about the perimeter of the plate.

Abstract: Wafers to be processed are mounted to a lapping plate of a lapping machine using a photosensitive thermoplastic material, such as a photoresist. In a preferred embodiment, the wafers are laminated to a dry film photopolymer disposed on a carrier sheet, after which the sheet is secured to the lapping plate using a pressed-fit hoop that stretches the carrier sheet across the surface of the lapping plate and holds the sheet secure about the perimeter of the plate.

Abstract: An integrated circuit having dielectric isolation is fabricated by growing a double epitaxial layer of N-type semiconductive material onto a P-type substrate. A dielectric layer is formed over the epitaxial layer and thereafter the dielectric and a portion of the epitaxial growth are removed in selected isolation regions to expose the semiconductive material. A dielectric is formed by anodizing the N-type semiconductive material in the selected isolation regions to provide electrical isolation between the remaining portions of the epitaxial growth. Base and emitter elements are formed in the conventional manner to complete the integrated circuit which is thereafter packaged.

Abstract: A semiconductor device has a plurality of electronic elements formed in spaced portions of a layer of semiconductive material which is disposed on a substrate. Electrical isolation is provided between the spaced portions by a layer of dielectric material formed on the peripheral surfaces of the spaced portions and on the substrate. Metal is disposed on the dielectric layer in said spaces for filling the spaces and providing a planar surface. The isolation is provided by forming a dielectric layer over the surface of the semiconductor device and thereafter removing the dielectric and the semiconductive material of the layer in regions between the portions of the layer in which the elements are formed to expose the substrate. A dielectric layer is then formed on the exposed substrate and the peripheral surfaces of the spaced portions.