Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.

Abstract: Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.

Abstract: Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.

Abstract: Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.

Abstract: Improved articles of manufacture are disclosed, together with methods for preparing such articles, whereby the surface of a graphite or comparable substrate is first densified with carbon to reduce surface porosity while still retaining sufficient surface texture to enhance the adherence of a subsequently applied boron coating.

Abstract: A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.

Abstract: In accordance with the invention there is provided a method of producing a densified carbon preform having interior a porous region of graded carbon-silicon carbide, carbon-silicon nitride or ceramic-ceramic composition.

Abstract: A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.

Abstract: This invention is directed to a surface treatment for SiC monofilament developed for the purpose of increasing the transverse strain-to-failure of composites, particularly aluminum composites. The surface treatment includes a fine grain SiC region adjacent to the bulk or stoichiometric SiC region and a transition region which interacts with the matrix material.

Abstract: Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 2370.degree. F., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin protective coating of boron-based refractory material on the surface of the silicon carbide filament both adds strength and provides a surface which is readily bonded to both metals and epoxy matrix materials during the casting of composite structures.

Abstract: The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.

Abstract: This invention relates to a process control system and method of controlling a chemical vapor deposition (CVD) process where a coating is deposited on a substrate heated by passing a current through the substrate to create a heating zone. The control system relies on detecting a signal induced on the coated substrate outside of the heating zone and using the induced signal to control one or more process parameters.

Abstract: The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.

Abstract: Silicon carbide filament is produced by overcoating a carbon monofilament core using continuous process vapor deposition. The deposition takes place by passing the carbon monofilament through a reactor into which gaseous sources of silicon and carbon are injected. At a deposition temperature of about 1300 C., a deposit of fine grained beta crystals of silicon carbide are formed. Application of a thin coating of silicon-rich silicon carbide on the surface of the filament both adds strength and provides a surface which is readily bonded to metals, glass and resin matrix materials during the forming of composite structures.