Patents by Inventor Raymond N. Vrtis
Raymond N. Vrtis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240093366Abstract: Described herein are compositions and methods of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising introducing into a reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.Type: ApplicationFiled: November 20, 2023Publication date: March 21, 2024Inventors: MING LI, XINJIAN LEI, RAYMOND N. VRTIS, ROBERT G. RIDGEWAY, MANCHAO XIAO
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Patent number: 11851756Abstract: Methods for forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate includes introducing into a reactor one or more compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.Type: GrantFiled: September 11, 2018Date of Patent: December 26, 2023Assignee: Versum Materials US, LLCInventors: Ming Li, Xinjian Lei, Raymond N. Vrtis, Robert G. Ridgeway, Manchao Xiao
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Publication number: 20230339986Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14-n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.Type: ApplicationFiled: June 13, 2023Publication date: October 26, 2023Inventors: ROBERT G. RIDGEWAY, RAYMOND N. VRTIS, XINJIAN LEI, MADHUKAR B. RAO, STEVEN GERARD MAYORGA, NEILL OSTERWALDER, MANCHAO XIAO, MEILIANG WANG
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Patent number: 11713328Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14?n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.Type: GrantFiled: August 21, 2019Date of Patent: August 1, 2023Assignee: VERSUM MATERIALS US, LLCInventors: Robert G. Ridgeway, Raymond N. Vrtis, Xinjian Lei, Madhukar B. Rao, Steven Gerard Mayorga, Neil Osterwalder, Manchao Xiao, Meiliang Wang
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Publication number: 20230123377Abstract: A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.Type: ApplicationFiled: December 9, 2022Publication date: April 20, 2023Inventors: Manchao Xiao, Raymond N. Vrtis, Robert Gordon Ridgeway, William R. Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei, Daniel P. Spence
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Publication number: 20220349049Abstract: Compositions and methods using same are used for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. The silicon-containing film is deposited using an alkylhydridosilane compound containing at least one Si—H bond.Type: ApplicationFiled: June 19, 2020Publication date: November 3, 2022Applicant: VERSUM MATERIALS US, LLCInventors: RAYMOND N. VRTIS, ROBERT G. RIDGEWAY
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Publication number: 20220267642Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.Type: ApplicationFiled: July 24, 2020Publication date: August 25, 2022Applicant: VERSUM MATERIALS US, LLCInventors: RAYMOND N. VRTIS, ROBERT G. RIDGEWAY, XINJIAN LEI, MING LI, MANCHAO XIAO
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Publication number: 20220044928Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: ApplicationFiled: October 26, 2021Publication date: February 10, 2022Applicant: VERSUM MATERIALS US, LLCInventors: ROBERT G. RIDGEWAY, JENNIFER LYNN ANNE ACHTYL, RAYMOND N. VRTIS, XINJIAN LEI, WILLIAM ROBERT ENTLEY
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Patent number: 11158498Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: GrantFiled: June 18, 2019Date of Patent: October 26, 2021Assignee: Versum Materials US, LLCInventors: Robert G. Ridgeway, Jennifer Lynn Anne Achtyl, Raymond N. Vrtis, Xinjian Lei, William Robert Entley
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Publication number: 20210140040Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.Type: ApplicationFiled: October 30, 2020Publication date: May 13, 2021Applicant: Versum Materials US, LLCInventors: JIANHENG LI, XINJIAN LEI, ROBERT G. RIDGEWAY, RAYMOND N. VRTIS, MANCHAO XIAO, RICHARD HO
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Patent number: 10985013Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.Type: GrantFiled: June 4, 2019Date of Patent: April 20, 2021Assignee: Versum Materials US, LLCInventors: Jianheng Li, Robert G. Ridgeway, Xinjian Lei, Raymond N. Vrtis, Bing Han, Madhukar B. Rao
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Publication number: 20200270749Abstract: Described herein are compositions and methods of forming a dielectric film comprising silicon and carbon onto at least a surface of a substrate, the method comprising introducing into a reactor at least one silacycloalkane precursor selected from the group consisting of compounds represented by the structure of Formula IA and compounds represented by the structure of Formula IB: as defined herein.Type: ApplicationFiled: September 11, 2018Publication date: August 27, 2020Inventors: Ming Li, Xinjian Lei, Raymond N. Vrtis, Robert G. Ridgeway, Manchao Xiao
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Publication number: 20200062787Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14?n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.Type: ApplicationFiled: August 21, 2019Publication date: February 27, 2020Applicant: Versum Materials US, LLCInventors: Robert G. Ridgeway, Raymond N. Vrtis, Xinjian Lei, Madhukar B. Rao, Steven Gerard Mayorga, Neil Osterwalder, Manchao Xiao, Meiliang Wang
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Publication number: 20190385840Abstract: A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.Type: ApplicationFiled: June 18, 2019Publication date: December 19, 2019Applicant: Versum Materials US, LLCInventors: Robert G. Ridgeway, Jennifer Lynn Anne Achtyl, Raymond N. Vrtis, Xinjian Lei, William Robert Entley
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Publication number: 20190382886Abstract: The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and/UV curing.Type: ApplicationFiled: June 16, 2019Publication date: December 19, 2019Applicant: Versum Materials US, LLCInventors: Jianheng Li, Xinjian Lei, Raymond N. Vrtis, Robert G. Ridgeway
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Publication number: 20190376178Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound comprising a carbon-carbon double or carbon-carbon triple bond. The plasma source employed comprises both a remote plasma source and an in-situ plasma source operating in combination.Type: ApplicationFiled: June 6, 2019Publication date: December 12, 2019Applicant: Versum Materials US, LLCInventors: Robert G. Ridgeway, Raymond N. Vrtis, Madhukar B. Rao
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Publication number: 20190304775Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.Type: ApplicationFiled: June 4, 2019Publication date: October 3, 2019Applicant: Versum Materials US, LLCInventors: Jianheng Li, Robert G. Ridgeway, Xinjian Lei, Raymond N. Vrtis, Bing Han, Madhukar Rao
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Patent number: 5626775Abstract: The present invention is directed to the etching of a material selected from the group consisting of silicon dioxide, silicon nitride, boronphosphorus silicate glass, fluorosilicate glass, siliconoxynitride, tungsten, tungsten silicide and mixtures thereof under plasma etch conditions, particularly for cleaning operations to remove silicon dioxide or silicon nitride from the walls and other surfaces within a reaction chamber of a plasma-enhanced chemical vapor deposition reactor. The etching chemicals used in the etch process are trifluoroacetic acid and it derivatives, such as; trifluoroacetic anhydride, trifluoromethyl ester of trifluoroacetic acid and trifluoroacetic acid amide and mixtures thereof.Type: GrantFiled: May 13, 1996Date of Patent: May 6, 1997Assignee: Air Products and Chemicals, Inc.Inventors: David A. Roberts, Raymond N. Vrtis, Arthur K. Hochberg, Robert G. Bryant, John G. Langan
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Patent number: 5492736Abstract: The present invention is a process for forming a fluorine-containing silicon oxide film on a substrate by plasma-enhanced chemical vapor deposition using a fluorinated silicon source of the formula: ##STR1## wherein at least one of R.sup.1 -R.sup.6 is fluorine and the remaining R groups are independently H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl, aryl or benzylic groups, or C.sub.x H.sub.2x when one or more of R.sup.1, R.sup.2 or R.sup.3 is connected to R.sup.4, R.sup.5 or R.sup.6 through a bridging group C.sub.y H.sub.2y ; where x is 1-6, and y is 0-6; where M is Si or C and n is 0-6 and R.sup.7 is independently H, F, C.sub.z H.sub.2z+1 where z is 1-6 or C.sub.r H.sub.s F.sub.t where r is 1-6, s is (2r+1-t); t is 1 to (2r+1) . The present invention is also the film formed by that process and several novel source materials used in the process.Type: GrantFiled: November 28, 1994Date of Patent: February 20, 1996Assignee: Air Products and Chemicals, Inc.Inventors: Ravi K. Laxman, Arthur K. Hochberg, David A. Roberts, Raymond N. Vrtis
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Patent number: 5026884Abstract: The present invention is directed to a process for the formation of an isolable C.sub.Type: GrantFiled: February 16, 1989Date of Patent: June 25, 1991Assignee: Massachusetts Institute of TechnologyInventors: Patricia A. Bianconi, Stephen J. Lippard, Chebrolu P. Rao, Raymond N. Vrtis