Patents by Inventor Raymond Nicholas Vrtis
Raymond Nicholas Vrtis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20160289455Abstract: Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.Type: ApplicationFiled: March 29, 2016Publication date: October 6, 2016Applicant: Air Products and Chemicals, Inc.Inventors: Seiji Inaoka, William Jack Casteel, JR., Raymond Nicholas Vrtis, Kathleen Esther Theodorou, Tianniu Chen, Mark Richard Brown
-
Publication number: 20160225616Abstract: Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H3PO4, showing good etch selectivity.Type: ApplicationFiled: September 30, 2015Publication date: August 4, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Jianheng Li, Robert Gordon Ridgeway, Xinjian Lei, Raymond Nicholas Vrtis, Bing Han, Madhukar Bhaskara Rao
-
Patent number: 9293361Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: July 3, 2014Date of Patent: March 22, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Aaron Scott Lukas
-
Publication number: 20160049293Abstract: Described herein is a method and composition comprising same for sealing the pores of a porous low dielectric constant (“low k”) layer by providing an additional thin dielectric film, referred to herein as a pore sealing layer, on at least a surface of the porous, low k layer to prevent further loss of dielectric constant of the underlying layer. In one aspect, the method comprises: contacting a porous low dielectric constant film with at least one organosilicon compound to provide an absorbed organosilicon compound and treating the absorbed organosilicon compound with ultraviolet light, plasma, or both, and repeating until a desired thickness of the pore sealing layer is formed.Type: ApplicationFiled: August 7, 2015Publication date: February 18, 2016Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Jianheng Li, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Xinjian Lei, Mark Leonard O'Neill, Xuezhong Jiang
-
Publication number: 20150364321Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.Type: ApplicationFiled: June 5, 2015Publication date: December 17, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Raymond Nicholas Vrtis, Robert Gordon Ridgeway, Jianheng Li, William Robert Entley, Jennifer Lynn Anne Achtyl, Xinjian Lei
-
Patent number: 9212420Abstract: A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.Type: GrantFiled: March 23, 2010Date of Patent: December 15, 2015Assignee: Tokyo Electron LimitedInventors: Eric M. Lee, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Patrick Timothy Hurley, Jacques Faguet, Takashi Matsumoto, Osayuki Akiyama
-
Patent number: 9061317Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: April 5, 2012Date of Patent: June 23, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Patent number: 9018107Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: May 6, 2014Date of Patent: April 28, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
-
Patent number: 8987039Abstract: A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the group consisting of an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula SivCxNuHyFz, wherein v+x+u+y+z=100%, v is from 1 to 35 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %.Type: GrantFiled: October 2, 2008Date of Patent: March 24, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Patrick Timothy Hurley, Robert Gordon Ridgeway, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Andrew David Johnson
-
Patent number: 8951342Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: November 1, 2011Date of Patent: February 10, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
-
Publication number: 20150021599Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm?3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.Type: ApplicationFiled: March 8, 2013Publication date: January 22, 2015Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Robert Gordon Ridgeway, Andrew David Johnson, Anupama Mallikarjunan, Raymond Nicholas Vrtis, Xinjian Lei, Mark Leonard O'Neill, Manchao Xiao, Jianheng Li, Michael T. Savo
-
Publication number: 20150014823Abstract: Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cm3 or greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25° C. to about 400° C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.Type: ApplicationFiled: March 8, 2013Publication date: January 15, 2015Inventors: Anupama Mallikarjunan, Andrew David Jihnson, Meiliang Wang, Raymond Nicholas Vrtis, Bing Han, Xinjian Lei, Mark Leonard O'Neill
-
Publication number: 20140363950Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: ApplicationFiled: July 3, 2014Publication date: December 11, 2014Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, JR., Aaron Scott Lukas
-
Patent number: 8889235Abstract: A process for forming a silicon carbonitride barrier dielectric film between a dielectric film and a metal interconnect of an integrated circuit substrate, comprising the steps of; providing the integrated circuit substrate having a dielectric film; contacting the substrate with a barrier dielectric film precursor comprising: RxR?y(NR?R??)zSi wherein R, R?, R? and R?? are each individually selected from hydrogen, linear or branched saturated or unsaturated alkyl, or aromatic; wherein x÷y+z=4; z=1-3; but R, R? cannot both be hydrogen; forming the silicon carbonitride barrier dielectric film with C/Si ratio >0.8 and a N/Si ratio >0.2 on the integrated circuit substrate.Type: GrantFiled: May 3, 2010Date of Patent: November 18, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Anupama Mallikarjunan, Raymond Nicholas Vrtis, Laura M. Matz, Mark Leonard O'Neill, Andrew David Johnson, Manchao Xiao
-
Patent number: 8846522Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: February 14, 2013Date of Patent: September 30, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
-
Publication number: 20140242813Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: May 6, 2014Publication date: August 28, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
-
Patent number: 8753986Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: December 15, 2010Date of Patent: June 17, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
-
Patent number: 8637396Abstract: A method is provided for depositing a dielectric barrier film including a precursor with silicon, carbon, oxygen, and hydrogen with improved barrier dielectric properties including lower dielectric constant and superior electrical properties. This method will be important for barrier layers used in a damascene or dual damascene integration for interconnect structures or in other dielectric barrier applications. In this example, specific structural properties are noted that improve the barrier performance.Type: GrantFiled: November 23, 2009Date of Patent: January 28, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Laura M. Matz, Raymond Nicholas Vrtis, Mark Leonard O'Neill, Dino Sinatore
-
Publication number: 20130260575Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a reaction chamber gaseous reagents comprising a porogenated precursor; optionally a structure former precursor selected from the group consisting an organosilane, an organosiloxane, and combinations thereof; and optionally a porogen precursor; applying an energy source to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film at least a portion of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: February 22, 2013Publication date: October 3, 2013Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Jennifer Elizabeth Antoline Al-Rashid, Raymond Nicholas Vrtis, Irene Joann Hsu
-
Publication number: 20130095255Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: April 5, 2012Publication date: April 18, 2013Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas