Abstract: An electrostatic chuck is made by a method in which the component parts are machined, then anodized to provide a hard insulating surface, and then assembled in a fixture, to provide a planar surface for wafer support that retains superior insulating properties; gas may be fed from the rim only, diffusing within interstices between the clamping surface and the wafer and maintaining a desired pressure by flowing radially through an impedance determined by the average spacing between clamping surface and wafer, thereby providing uniform pressure across the clamping surface without the use of elastomeric seals.

Abstract: An aluminum electrostatic chuck for holding semiconductor wafers during wafer processing. The chuck is characterized by a closely determined magnitude of electrostatic holding force due to an anodization step for creating a finely uniform thickness of dielectric material on the chuck surface facing the wafer which, in turn, determines the holding force. The chuck cross section comprises two different thickness areas with fluid cooling being applied to the thinner thickness area during chuck anodization to assure thickness uniformity of the anodized material across the face of the chuck.

Abstract: An electrostatic chuck 8 assembly includes, from top to bottom: a top multilayer ceramic insulating layer 10; an electrostatic pattern layer 12 having a conductive electrostatic pattern 16 disposed on a multilayer ceramic substrate; a multilayer ceramic support layer 20; and, a heat sink base 30 having a backside cooling channels machined therein. Layers 12, 12 and 20 are bonded together using multilayer ceramic techniques and the heatsink base 30 is brazed to the bottom of the multilayer ceramic support layer 20.

Abstract: An apparatus and method for cleaving GaAs laser bars from a cell utilizes a first jaw applied to one end of a laser bar to propagate a cleavage and a second jaw applied to an opposite end which provides a biasing force that assures separation of the bar from the cell along the same crystallographic plane. The apparatus may be used in an ultra-high vacuum environment and allows handling of the bars without contacting the vital areas of the top surfaces or facet faces. The apparatus precisely locates bars after cleavage so that they may be further processed.

Abstract: An electrostatic chuck 40 assembly includes, from top to bottom: a top isolation layer 42; an electrostatic pattern layer 44 comprised of an electrically conductive electrostatic pattern 46 disposed on a substrate 45; a heating layer 50 comprised of an electrically conductive heating pattern 54 disposed on a substrate 52; a support 60; and, a heat sink base 70 having backside cooling and insulating channels 78, 80 provided therein.

Abstract: An electrostatic chuck is provided with an electrode split into two sections. The separate sections are joined through a tapered joint and bonded using epoxy. An insulator electrically separates the two sections and covers the top of the joined sections to form a clamping surface. The geometry of the electrode forms three annular regions, dividing the clamping surface into two equal areas distributed symmetrically. Moreover, the split-ring electrostatic chuck just described is fabricated by forming the two, separate electrodes; coating the separate electrodes with an insulator; joining the electrodes; machining the joint, top surface of the electrodes to form a single, co-planar, flat, smooth surface; and applying an insulator to that top surface.

Abstract: An electrostatic chuck is provided with an electrode split into two sections. The separate sections are joined through a tapered joint and bonded using epoxy. An insulator electrically separates the two sections and covers the top of the joined sections to form a clamping surface. The geometry of the electrode forms three annular regions, dividing the clamping surface into two equal areas distributed symmetrically. Moreover, the split-ring electrostatic chuck just described is fabricated by forming the two, separate electrodes; coating the separate electrodes with an insulator; joining the electrodes; machining the joint, top surface of the electrodes to form a single, co-planar, flat, smooth surface; and applying an insulator to that top surface.

Abstract: A gas chromatography (GC) system includes a primary complete, independently-operable, self-contained GC system and a secondary, dependently-operable GC system. The primary and secondary systems have two independently controlled GC ovens. Injectors and detectors are supported by heater blocks or ovens mounted on the respective GC ovens and are connected to the electrical and pneumatic controls of the primary GC system. The injectors and detectors of the secondary GC system share operation of the primary GC system. GC columns can be mounted in each oven and operated completely independently or dependently in different ways. A separate power supply for the secondary oven is connectable to a separate circuit or power line in the user environment.

Abstract: The flushing of the syringe with a side port is performed by introducing a liquid solvent through the side port while the plunger is retracted from the barrel. At the completion of the flushing operation the plunger is fully inserted into the barrel expelling all the solvent except that in the needle. The needle is then inserted into the sample and the plunger is raised to withdraw the sample. With this arrangement, it is possible to take a 0.1 L sample and dispense it because of the solvent reserve in the barrel. Furthermore, the solvent reserved in the barrel provides a buffer so that sampled material does not contact the plunger or get into the annular space around the retracted plunger.