Abstract: A base plate for a heat sink comprises a cooling plate and spacer elements, which are arranged on the surface of the cooling plate. The spacer elements and the cooling plate are made as one piece and the material in the surface region of the cooling plate and of the spacer elements being the same and formed in the same process.

Abstract: A base plate for a heat sink comprises a cooling plate and spacer elements, which are arranged on the surface of the cooling plate. The spacer elements and the cooling plate are made as one piece and the material in the surface region of the cooling plate and of the spacer elements being the same and formed in the same process.

Abstract: A first electronic component, e.g., a semiconductor die and a second electronic component, e.g., a substrate, each with a main surface, are bonded to each other by applying at least one metal layer comprising an indium layer on each of the main surfaces. Then the semiconductor die and the substrate are aligned against each other with their main surfaces facing each other. The die and substrate with the metal layers in between form an arrangement, which is introduced into a compression means. Afterwards the arrangement is compressed in the compression means at a pressure in a range of 10 to 35 MPa, and heat in a range of 230 to 275° C. is applied to the arrangement, by which temperature and pressure the electronic components are bonded to each other. The compression process is performable in oxygeneous gas atmosphere inside the compression means.

Abstract: A semiconductor module having a base element, at least one insulation element arranged on the base element, and at least one semiconductor element arranged on the insulation element. The insulation element has a metal layer on one side and another metal layer on the opposite side. At least one of the metal layers is curved or has curved portions. As a result, it is possible to minimize excessive field increases in the edge zones and increase the dielectric strength of the semiconductor module.

Abstract: In a liquid cooling device (1) for a high-power semiconductor module (14), which contains a plurality of heat-generating submodules (8a-h) arranged next to one another on a cooling surface (3) and is fusion-bonded to the cooling surface (3), an improved load cycle resistance is achieved by the liquid cooling device (1) having a housing (2) which encloses a liquid space (4), through which a cooling liquid flows, and the upper side of which forms the cooling surface (3), and by the housing (2) of the liquid cooling device (1), at least in the region of the cooling surface (3), consisting of a metal-ceramic composite material, the coefficient of thermal expansion of which is adapted to the coefficient of thermal expansion of the ceramic substrates or of the power semiconductor devices of the submodules (8a-h) and, by additional means (11a-h; 12) for improving the heat transfer between the cooling surface (3) and the cooling liquid being provided in the liquid space (4) of the liquid cooling device (1).

Abstract: A power semiconductor module is specified in which at least one semiconductor chip, which is fitted on a baseplate, is made contact with by a respective contact plunger. The position of the contact plungers can be set individually in a manner corresponding to a distance between the semiconductor chips and a main connection which accommodates the contact plungers. The contact plungers are either subjected to pressure by means of a spring or fixed by means of a solder layer.