Abstract: Provided is a plant for the continuous production of monosilane and tetrachlorosilane by catalytic dismutation of trichlorosilane, wherein the plant contains: a countercurrent reactor having a double wall, a catalyst bed containing a catalyst which is located in the countercurrent reactor, a condenser at the top of the countercurrent reactor, a vaporizer unit at the bottom of the countercurrent reactor, a trichlorosilane feed line for the introduction of trichlorosilane into the countercurrent reactor, a heat exchanger, with the trichlorosilane conveyed by line via the heat exchanger and preheated there by a bottom product from the vaporizer unit and, for this purpose, the bottom product is fed by line via the heat exchanger into the double wall at a level in the lower part of the countercurrent reactor and discharged from the double wall at a level in the upper part of the countercurrent reactor, a condensation unit downstream of the condenser, and a distillation column having an outlet for monosilane.

Abstract: Provided is an apparatus for preparing silanes of the general formula HnSiCU n where n=1, 2, 3 and/or 4 by dismutation of a chlorinated silane in the presence of a catalyst, wherein the apparatus includes: a distillation column having a column bottom, a column top, at least one feed inlet, a plurality of product offtakes, and a chimney tray; and a side reactor containing a catalyst bed having an upper edge, the side reactor being connected to the distillation column via at least three pipes including a first pipe, a second pipe, and a third pipe.

Abstract: The present invention relates to a device, to the use thereof, and to a method for the substantially energy-independent continuous production of chlorosilanes, particularly for the production of trichlorosilane as an intermediate product for yielding high-purity silicon.

Abstract: The invention relates to a method for the treatment of a composition containing inorganic silanes and at least one foreign metal and/or a compound containing a foreign metal, wherein the composition is brought in contact with at least one adsorption agent, and for obtaining the composition, in which the content of foreign metal and/or of a compound containing a foreign metal is reduced, and to a corresponding composition having a reduced foreign metal content, and further to the use of organic resins, activated carbons, silicates, and/or zeolites for the reduction of foreign metals and/or compounds containing foreign metals in compositions of inorganic silanes.

Abstract: A device for the thermal decomposition of a volatile compound, and for deposition of particles which are formed by the decomposition, includes (a) a pressure vessel, (b) at least one reaction tube located inside the pressure vessel such that, an open end of the reaction tube extends into the pressure vessel and an other end of the reaction tube is located outside the pressure vessel and is provided with a gas feed, wherein a longitudinal axis of the reaction tube is oriented in the direction of gravity and parallel to a longitudinal axis of the pressure vessel and wherein the reaction tube can be heated on a gas inlet side and cooled on a gas outlet side, wherein the pressure vessel, in its lower part, comprises a collection cone, wherein the open end of the at least one reaction tube extends into a gas space of the collection cone, wherein the collection cone is connected to an outlet lock for particles, and (c) a gas outlet unit located mainly inside the pressure vessel, the gas outlet unit comprising a gas

Abstract: Method for producing silicon which is suitable as a starting material for producing a silicon melt for the fabrication of silicon blocks or silicon crystals, comprising the following steps: introducing a gaseous mixture of monosilane and hydrogen into a reactor, thermal degrading the gaseous mixture for forming silicon powder, separating the formed silicon powder produced from the gaseous mixture, and mechanical compacting the separated silicon powder with compacting rollers which having a roller jacket consisting of a ceramic material selected from graphite, glass and silicon nitride.

Abstract: In a reactor for the decomposition of a silicon-containing gas, provision is made, to avoid silicon deposition on an inner wall of a reactor vessel, for at least one catalytically active mesh to be provided within a reaction chamber between at least one gas feed line and the inner wall (4). The mesh accelerates the thermal decomposition of the gas and reduces the deposition of silicon on the inner wall. Also described is a process for the preparation of silicon using the reactor according to the invention and the use in photovoltaics of the silicon prepared.

Abstract: The present invention relates to a process for producing silicon by thermal decomposition of a gaseous mixture comprising monosilane, monochlorosilane and, if desired, further chlorosilanes, e.g. dichlorosilane.

Abstract: Compacting device for the low-metal compaction of a powder with a casing which at least in part surrounds a working chamber, with a feed arrangement arranged on the casing and feeding a powder, which is to be compacted, into the working chamber, with at least a compacting roller which is rotatably arranged in the working chamber, comprises a roller jacket and, together with an opposing wall, forms a compacting gap for compacting the powder therein, characterised in that the at least one compacting roller consists of ceramic, at least on the roller jacket.

Abstract: The present invention relates to a plant and a process for the continuous production of monosilane and tetrachlorosilane by catalytic dismutation of trichlorosilane at an operating temperature and a pressure of from 1 to 50 bar abs. in a plant according to claim 1, in which—trichlorosilane (A) is preheated in a heat exchanger (7), and fed to the 10 countercurrent reactor (1) which is provided with catalyst (3),—product mixture formed in the countercurrent reactor (1) is at least partly condensed by means of the condenser (5) at a temperature in the range from ?25 to 50° C. with the condensate flowing back into the countercurrent reactor (1),—the product phase which is not condensed in the condenser (5) is passed to the 15 condensation unit (8) which is operated at a temperature in the range from ?40 to ?110° C.,—the volatile product phase from the condensation unit (8) is fed to the distillation column (9) which is operated at a temperature in the range from ?60 to ?170° C.

Abstract: The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.

Abstract: Method for producing silicon which is suitable as a starting material for producing a silicon melt for the fabrication of silicon blocks or silicon crystals, comprising the following steps: introduction of a gaseous mixture of monosilane and hydrogen into a reactor, thermal degradation of the gaseous mixture with formation of silicon powder, separation of the silicon powder obtained from the gaseous mixture, and mechanical compacting of the separated silicon powder.

Abstract: In a reactor for the decomposition of a silicon-containing gas, provision is made, to avoid silicon deposition on an inner wall of a reactor vessel, for at least one catalytically active mesh to be provided within a reaction chamber between at least one gas feed line and the inner wall (4). The mesh accelerates the thermal decomposition of the gas and reduces the deposition of silicon on the inner wall. Also described is a process for the preparation of silicon using the reactor according to the invention and the use in photovoltaics of the silicon prepared.

Abstract: The invention relates to an apparatus, for preparing silanes of the general formula HnSiCl4-n where n=1, 2, 3 and/or 4 by dismutation of at least one relatively highly chlorinated silane in the presence of a catalyst, which is based on at least one distillation column (1) having a column bottom (1.1) and a column top (1.2), at least one side reactor (2) with catalyst bed (3), at least one feed inlet (1.3), a product offtake (1.4) and at least one further product offtake (1.5 or 1.8), where the distillation column (1) is provided with at least one chimney tray (4) and at least one side reactor (2) is connected to the distillation column (1) via at least three pipes (5, 6, 7) in such a way that the connection point of the line (5) to the distillation column (1) for the discharge of the condensate from the chimney tray (4, 4.1) is at a higher level than the upper edge of the catalyst bed (3, 3.1 or 3.2), the line (6) for the discharge of the liquid phase from the side reactor (2) opens (6.

Abstract: A reactor for separating a gas containing silicon is provided with at least one electrically heatable deposition element of silicon to save costs, which element has a doping with at least one impurity to improve its electrical conductivity, the doping having a concentration in an initial state, such that the deposition element with the silicon deposited thereon in the final state is suitable for the manufacture of silicon melt for the production of polycrystalline silicon blocks or single silicon crystals for photovoltaics. A method for manufacturing silicon with the reactor according to the invention and the use of the manufactured silicon in photovoltaics are also described.

Abstract: Compacting device for the low-metal compaction of a powder with a casing which at least in part surrounds a working chamber, with a feed arrangement arranged on the casing and feeding a powder, which is to be compacted, into the working chamber, with at least a compacting roller which is rotatably arranged in the working chamber, comprises a roller jacket and, together with an opposing wall, forms a compacting gap for compacting the powder therein, characterised in that the at least one compacting roller consists of ceramic, at least on the roller jacket.

Abstract: The present invention relates to a process for producing silicon by thermal decomposition of a gaseous mixture comprising monosilane, monochlorosilane and, if desired, further chlorosilanes, e.g. dichlorosilane.

Abstract: The present invention relates to a device for the thermal decomposition of volatile compounds and deposition of particles which are then formed, which includes at least the following characteristic features a pressure vessel (1), at least one reaction tube (2), the open end (2e) of which extends-into the pressure vessel and the other end of which is located outside the pressure vessel and is provided with a gas feed (3), the longitudinal axis of the reaction tube is oriented in the direction of gravity and parallel to the longitudinal axis of the pressure vessel (1d), and the reaction tube can be heated (2a) on the gas inlet side and cooled (2b) on the gas outlet side, the pressure vessel (1), in its lower part, has a collection cone (1a), the open end of the reaction tube(s) (2c) extending into the gas space of the collection cone (1b), the collection cone (1a) is connected to an outlet lock (6) for powder (P), and a gas outlet unit (7), which is equipped with a gas guide (7a), the gas inlet region (7b) of w

Abstract: A process for depositing a solid (B) proceeds by targeted thermal decomposition of a gaseous substance (A). The substance (A) has a higher density than the gaseous product (C) formed during the decomposition. In the process, a device is used which has a cup (1), the base (1.1) of which is oriented in the direction of the force of gravity (g) and the opening region (1.2) of which is oriented in the opposite direction to the force of gravity (g). The cup (1) can be heated directly or indirectly by a heating, temperature-measuring and control unit (3.3). The device further contains a substance-adding unit (2) with substance feedline (3.1) and metering unit (3.2), the substance-adding unit (2) being oriented with the substance outlet (2.1) in the direction of the force of gravity (g) and projecting into the free volume of the cup (1) between the base (1.1) and opening region (1.2). The device also has a reactor casing (3) and an outlet (3.6) for gaseous product (C).

Abstract: The invention relates to a process for the preparation of organosilylalkylpolysulfanes, of the general formula I (R1R2R3SiR4)2Sx (I) by reaction of organosilylalkylpolysulfanes of the general formula II (R1R2R3SiR4)2Sy (II) with an ionic sulfide of the general formula M+2S2− (III) and an organosilylalkyl halide of the general formula R1R2R3SiR4X (IV), the long-chain organosilylalkylpolysulfane of the general formula (II) and the organosilylalkyl halide of the general formula (IV) being initially introduced into the reaction vessel and the ionic sulfide of the general formula (III) being added to this solution in several portions.