Abstract: A method of preparing a resin infused random fiber mat including the step of forming a liquid dispersion mat of polymeric resin and fiber on a porous substrate.

Abstract: A method of preparing a resin infused random fiber mat including the step of forming a liquid dispersion mat of polymeric resin and fiber on a porous substrate.

Abstract: A solar module (2) comprising: (a) a plurality of interconnected photovoltaic cells (4); (b) a forward protective layer (22); (c) a rearward protective layer (24); and (d) an reinforcement (10); wherein the reinforcement is integrally located within the solar module and extends from a location substantially proximate to the forward protective layer to a location substantially proximate to the rearward protective layer.

Abstract: A light splitting optical module that converts incident light into electrical energy, the module including a solid optical element comprising an input end for receiving light, a first side, and a second side spaced from the first side, a first solar cell adjacent to the first side of the solid optical element, and a second solar cell adjacent to the second side of the solid optical element. The first solar cell is positioned to absorb a first subset of incident light and reflect a first remainder of the incident light to the second solar cell through the solid optical element, wherein the first solar cell has a lower band gap than the second cell.

Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

Abstract: The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber.

Abstract: The invention relates to a photovoltaic article comprising a plurality of photovoltaic cells having first (22) and second (24) electrical connector segments in contact with the top side (18) of a first cell (10) and the backside (16) of a second adjacent cell (12). The materials used to form the electrical connector segments are selected to minimize corrosion, maximize contact area, and lower contact resistance over the lifetime of the article.

Abstract: An article of manufacture includes a PV element having a conductive layer positioned on a light-incident side of the PV element, a conductor electrically coupled to the conductive layer, and a conductive particle matrix interposed between the conductor and the conductive layer at a number of positions on the conductive layer. The article further includes a carrier film positioned on the light-incident side of the PV element, and a non-conductive adhesive, where the adhesive and the conductor are positioned between the carrier film and the conductive layer.

Abstract: A photovoltaic system that converts incident light into electrical energy that includes a light trapping optical module having a light randomizing dielectric slab with a first surface and a second surface, a first cell adjacent to the first surface of the slab that has a bandgap of lower energy than the energy of absorption onset of the dielectric slab, at least one filter element in optical contact with the second surface of the dielectric slab, and a sub-cell array with a plurality of photovoltaic sub-cells, wherein at least one of the sub-cells has a first surface that is in optical contact with the at least one filter element.

Abstract: A solar module (2) comprising: (a) a plurality of interconnected photovoltaic cells (4); (b) a forward protective layer (22); (c) a rearward protective layer (24); and (d) an reinforcement (10); wherein the reinforcement is integrally located within the solar module and extends from a location substantially proximate to the forward protective layer to a location substantially proximate to the rearward protective layer.

Abstract: A composition comprising a phase separated block copolymer and an inorganic dielectric nanoparticle, wherein the nanoparticle is dispersed in the copolymer and is present primarily in one phase. For example, a Ti02 nanocomposite can be created via the in situ formation of Ti02 within a silane-grafted OBC. Taking advantage of the phase morphology of the OBC and the differential swelling of the hard and soft segments, due to their inherent crystallinity, enables the selective incorporation of Ti02 nanoparticles into the soft segments of the OBC.

Abstract: The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.

Abstract: A light splitting optical module that converts incident light into electrical energy, the module including a solid optical element comprising an input end for receiving light, a first side, and a second side spaced from the first side, a first solar cell adjacent to the first side of the solid optical element, and a second solar cell adjacent to the second side of the solid optical element. The first solar cell is positioned to absorb a first subset of incident light and reflect a first remainder of the incident light to the second solar cell through the solid optical element.

Abstract: An article of manufacture includes at least two solar active elements separated by a gap, with a flexible material provided to define the gap. The article provides for enhanced resilience and conformity to an installation surface.

Abstract: The present invention provides photovoltaic devices that comprise multiple bandgap cell arrays in combination with spectrum splitting optics. The spectrum splitting optics include one or more optical spectrum splitting modules that include two or more optical splitting, diffractive elements that are optically in series to successively and diffractively split incident light into segments or slices that are independently directed onto different photovoltaic cell(s) of the array having appropriate bandgap characteristics.

Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

Abstract: The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate improved electronic performance. As an overview, the present invention involves a methodology that metalizes the pnictide film, anneals the metalized film under conditions that tend to form an alloy between the pnictide film and the alloy, and then removes the excess metal and at least a portion of the alloy. In one mode of practice, the pnictide semiconductor is Zinc phosphide and the metal is Magnesium.

Abstract: The present invention is premised upon a method of producing two or more thin-film-based interconnected photovoltaic cells comprising the steps of: a) providing a photovoltaic article comprising: a flexible conductive substrate, at least on photo-electrically active layer, a top transparent conducting layer, and a carrier structure disposed above the tap transparent layer; b) forming one or more first channels through the layers of the photovoltaic article; c) applying an insulating layer to the conductive substrate and spanning the one or more first channel; d) removing the carrier structure; e) forming an addition to the one or more first channels through the insulating layer; f) forming one or more second channels off set from the one or mom first channels through the insulating layer to expose a conductive surface of the flexible conductive substrate; g) applying a first electrically conductive material to the conductive surface of the flexible conductive substrate via the one or more; second channels; h)

Abstract: The present invention is directed to a method of producing two or more thin-film-based interconnected photovoltaic cells (100) comprising the steps of: a) providing a photovoltaic article comprising: a flexible conductive substrate, at least one photoelectrically active layer, and a top transparent conducting layer; b) forming one or more first channels (140) through the flexible conductive substrate to expose a portion of the photoelectrical]?—active layer; e) applying an insulating segment to the conductive substrate and spanning the one or more first-channel; d) forming one or more second channels off set from the one or more first channels—‘through—the photoelectrically active layer to expose a conductive surface of the flexible conductive substrate; I) forming one or more third channels (170) off set from both the first channels and the second channels, through the top transparent conducting layer and to the photoelectrically active layer: and g) applying an electrically conductive material (180) above t

Abstract: The present invention provides optoelectronic devices containing at least one conforming, thin film barrier coating provided on a nonplanar surface comprising a plurality of junctures. The barrier coating has a hybrid morphology including crystalline domains distributed in an amorphous matrix. The conformal coatings protect the optoelectronic device with long-lasting, durable, high quality barrier protection even though the coatings have sufficient crystalline characteristics so that many embodiments are electrically conductive.