Abstract: A method using a chemical synthesis method to produce a metallic nanoparticle inorganic composite having fine metallic nanoparticles that are uniformly dispersed at a high density in a solidified matrix, a metallic nanoparticle inorganic composite, and a plasmon waveguide using this composite are provided. Thus, a method including: preparing a precursor solution, applying the precursor solution onto a substrate, and then hydrolyzing the precursor solution to form an oxide film having fine pores, bringing the oxide film into contact with an acidic aqueous solution of tin chloride to chemically adsorb Sn2+ ions in the fine pores, removing an excess of the Sn2+ ions, bringing the oxide film into contact with an aqueous metal chelate solution to precipitate metallic nanoparticles in the fine pores, and removing an excess of ions of the metal is provided.

Abstract: It is made possible to provide an optical waveguide system that has a coupling mechanism capable of selecting a wavelength and has the highest possible conversion efficiency, and that is capable of providing directivity in the light propagation direction. An optical waveguide system includes: a three-dimensional photonic crystalline structure including crystal pillars and having a hollow structure inside thereof; an optical waveguide in which a plurality of metal nanoparticles are dispersed in a dielectric material, the optical waveguide having an end portion inserted between the crystal pillars of the three-dimensional photonic crystalline structure, and containing semiconductor quantum dots that are located adjacent to the metal nanoparticles and emit near-field light when receiving excitation light, the metal nanoparticles exciting surface plasmon when receiving the near-field light; and an excitation light source that emits the excitation light for exciting the semiconductor quantum dots.

Abstract: A solid catalyst has a close-packed structure and has a first surface layer and a second surface layer, wherein the first surface layer includes platinum as a main component and the second surface layer contains PtaXb (wherein X is one element selected from the group consisting of Zr, Hf, Nb, Ta, Mo, and W; a+b=100; and 25?b?50); and a fuel cell includes the solid catalyst as an anode-side electrode catalyst.

Abstract: A solid catalyst having a close-packed structure has basic structural units present in the surface of the solid catalyst, the basic structural units including (i) a triangular lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the triangular lattice so that each atom of one of the elements adjoins atoms of the other elements or (ii) a rhombic lattice constituted of atoms of platinum, ruthenium, and at least one additional element which are disposed at the vertexes in the rhombic lattice in an atomic ratio of 1:2:1 so that each ruthenium atom directly adjoins a platinum atom and an atom of the additional element; and a fuel cell includes either of the solid catalyst as an anode-side electrode catalyst.

Abstract: A near-field interaction control element includes a near-field optical waveguide containing particles formed of a metal, a metal anion or a metal cation with a diameter of 0.5 nm or more and 3 nm or less and a dielectric constant of ?2.5 or more and ?1.5 or less, an electron injector/discharger injecting or discharging an electron into or from the particles contained in the near-field optical waveguide to vary a dielectric constant of the near-field optical waveguide, a near-field light introducing part introducing near-field light into the near-field optical waveguide, and a near-field light emitting part emitting the near-field light having guided through the near-field optical waveguide.

Abstract: An optical waveguide includes a propagating light waveguide, a coupler including a photonic crystal, and a surface plasmon waveguide, the propagating light waveguide, the coupler, and the surface plasmon waveguide being disposed in one plane along a waveguiding direction.

Abstract: The present invention is related to a process for producing a metallic fine particle dispersed film which includes metallic fine particles dispersed densely within a silicon oxide layer without aggregation. The process includes hydrolyzing and polycondensing an organosilane to form a silicon oxide layer with hydroxyl and/or alkoxide groups remaining unremoved on its side chains, bringing the silicon oxide layer into contact with an aqueous acidic tin chloride solution, and then bringing the silicon oxide layer into contact with an aqueous metal chelate solution to disperse metallic fine particles in the silicon oxide layer.

Abstract: An optical waveguide includes a propagating light waveguide, a coupler including a photonic crystal, and a surface plasmon waveguide, the propagating light waveguide, the coupler, and the surface plasmon waveguide being disposed in one plane along a waveguiding direction.

Abstract: Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, barrier structure unit formed of dielectric which surrounds the quantum dots, injection unit configured to inject an electron into position of the ground level in each quantum dot via the barrier structure unit, utilizing tunneling effect, or to prevent injection of an electron into the position, injecting the electron or preventing injection of the electron controlled by changing an energy level of the injection unit, source which emits, to the quantum dots, first light beam having first energy for exciting electrons from the ground level to the excited level, and source which emits, to the quantum dots, second light beam having second energy different from the first energy.

Abstract: A near-field interaction control element includes a near-field optical waveguide containing particles formed of a metal, a metal anion or a metal cation with a diameter of 0.5 nm or more and 3 nm or less and a dielectric constant of ?2.5 or more and ?1.5 or less, an electron injector/discharger injecting or discharging an electron into or from the particles contained in the near-field optical waveguide to vary a dielectric constant of the near-field optical waveguide, a near-field light introducing part introducing near-field light into the near-field optical waveguide, and a near-field light emitting part emitting the near-field light having guided through the near-field optical waveguide.

Abstract: A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.

Abstract: A refractive index variable element has a structure including a solid matrix, and one or more types of quantum dots dispersed in the solid matrix and having discrete occupied and unoccupied electron energy levels. The quantum dots perform a function of generating a pair of positive and negative charges upon irradiation with light, a function of trapping a positive charge, and a function of trapping a negative charge. The quantum dots performing the function of trapping a negative charge are selected from the group consisting of a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron, a metal chelate complex, and metallocene and derivatives thereof.

Abstract: A refractive index variable device has a structure including quantum dots dispersed in a solid matrix, each of the quantum dots comprising a combination of a negatively charged accepter and a positively charged atom, where the outermost electron shell of the positively charged atom is fully filled with electrons so that an additional electron occupies an upper different shell orbital when receives an electron; and an electron injector injecting an electron into the quantum dots through the solid matrix.

Abstract: A semiconductor substrate includes a support substrate 1 has gettering sites 10 for gettering impurity metal, an embedded insulating film 2 which is provided on the support substrate 1 and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer) 3 provided on the embedded insulating film 2.

Abstract: Refractive index changing apparatus includes quantum dots each having discrete energy levels including ground level and excited level, the excited level being higher than the ground level even if energy due to ambient temperature is provided on the quantum dots, barrier structure unit formed of dielectric which surrounds the quantum dots, injection unit configured to inject an electron into position of the ground level in each quantum dot via the barrier structure unit, utilizing tunneling effect, or to prevent injection of an electron into the position, injecting the electron or preventing injection of the electron controlled by changing an energy level of the injection unit, source which emits, to the quantum dots, first light beam having first energy for exciting electrons from the ground level to the excited level, and source which emits, to the quantum dots, second light beam having second energy different from the first energy.

Abstract: A refractive index variable element includes a structure including quantum dots having discrete energy levels and a dielectric matrix surrounding the quantum dots, and an electron injector injecting an electron into the quantum dots through the dielectric matrix.