Abstract: A semiconductor laser device comprises a plurality of layers of semicondung materials, first contact means providing electrical contact to a basal layer of the device and second contact means providing electrical contact to an upper layer of the device, with at least one layer disposed between the basal layer and the upper layer being selected to be sufficiently thin that size quantization occurs, i.e. that a semiconductor device with a quantum well structure is created. The second contact means comprises a first strip-like contact overlying a first lasing region of the device and a second strip-like contact overlying a second lasing region of the device. The light losses associated with photons generated by laser action in the first region are intentionally made different from the light losses associated with photons generated by laser action in the second region which permits laser action at two distinct wavelengths in a monolithic device.